Invention Grant
- Patent Title: Planarization method
-
Application No.: US15904405Application Date: 2018-02-25
-
Publication No.: US10262869B2Publication Date: 2019-04-16
- Inventor: Jen-Chieh Lin , Lee-Yuan Chen , Wen-Chin Lin , Chi-Lune Huang , Pi-Hung Chuang , Tai-Lin Chen , Sun-Hong Chen
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201710180563 20170324
- Main IPC: H01L21/3105
- IPC: H01L21/3105 ; H01L21/308 ; H01L21/768 ; H01L21/321

Abstract:
A planarization method includes providing a substrate having a semiconductor structure formed thereon. A dielectric layer is formed on the substrate, and a mask layer is formed on the dielectric layer. A first chemical mechanical polishing process is performed to remove a portion of the mask layer thereby forming an opening directly over the semiconductor structure and exposing the dielectric layer. A first etching process is performed to anisotropically remove a portion of the dielectric layer from the opening. The mask layer is then removed and a second chemical mechanical polishing process is then performed.
Public/Granted literature
- US20180277382A1 PLANARIZATION METHOD Public/Granted day:2018-09-27
Information query
IPC分类: