Invention Grant
- Patent Title: Solid-state imaging sensor
-
Application No.: US15574558Application Date: 2016-05-20
-
Publication No.: US10263025B2Publication Date: 2019-04-16
- Inventor: Itaru Oshiyama , Hiroshi Tanaka
- Applicant: SONY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Chip Law Group
- Priority: JP2015-114525 20150605
- International Application: PCT/JP2016/065024 WO 20160520
- International Announcement: WO2016/194654 WO 20161208
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/146 ; G02B1/115 ; G02B1/118 ; H04N5/357 ; H04N5/369

Abstract:
The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.
Public/Granted literature
- US20180158857A1 SOLID-STATE IMAGING SENSOR Public/Granted day:2018-06-07
Information query
IPC分类: