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1.发明授权Solid-state image pickup device and image pickup apparatus including the same 有权固态图像拾取装置和包括该固态图像拾取装置的图像拾取装置公开(公告)号：US08981517B2
公开(公告)日：2015-03-17
申请号：US13793837
申请日：2013-03-11
Applicant: Sony Corporation
Inventor： Itaru Oshiyama , Susumu Hiyama
IPC: H01L31/06 , H01L31/00 , H01L31/062 , H01L31/113 , H01L27/148 , H01L27/146
CPC classification number: H01L27/148 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14687
Abstract: A solid-state image pickup element 1 is structured so as to include: a semiconductor layer 2 having a photodiode formed therein, photoelectric conversion being carried out in the photodiode; a first film 21 having negative fixed charges and formed on the semiconductor layer 2 in a region in which at least the photodiode is formed; and a second film 22 having the negative fixed charges, made of a material different from that of the first film 21 having the negative fixed charges, and formed on the first film 21 having the negative fixed charges.
Abstract translation: 固态图像拾取元件1被构造成包括：其中形成有光电二极管的半导体层2，在光电二极管中执行光电转换; 在至少形成有光电二极管的区域中，在半导体层2上形成负固定电荷的第一膜21; 以及具有负固定电荷的第二膜22，其由具有负固定电荷的第一膜21的材料制成，并形成在具有负固定电荷的第一膜21上。
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2.发明申请SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND IMAGE PICKUP APPARATUS INCLUDING THE SAME 审中-公开固态图像拾取元件，其制造方法和包括其的图像拾取装置公开(公告)号：US20130200252A1
公开(公告)日：2013-08-08
申请号：US13793837
申请日：2013-03-11
Applicant: SONY CORPORATION
Inventor： Itaru Oshiyama , Susumu Hiyama
IPC: H01L27/148
CPC classification number: H01L27/148 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14687
Abstract: A solid-state image pickup element 1 is structured so as to include: a semiconductor layer 2 having a photodiode formed therein, photoelectric conversion being carried out in the photodiode; a first film 21 having negative fixed charges and formed on the semiconductor layer 2 in a region in which at least the photodiode is formed; and a second film 22 having the negative fixed charges, made of a material different from that of the first film 21 having the negative fixed charges, and formed on the first film 21 having the negative fixed charges.
Abstract translation: 固态图像拾取元件1被构造成包括：其中形成有光电二极管的半导体层2，在光电二极管中执行光电转换; 在至少形成有光电二极管的区域中，在半导体层2上形成负固定电荷的第一膜21; 以及具有负固定电荷的第二膜22，其由具有负固定电荷的第一膜21的材料制成，并形成在具有负固定电荷的第一膜21上。
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公开(公告)号：US10263025B2
公开(公告)日：2019-04-16
申请号：US15574558
申请日：2016-05-20
Applicant: SONY CORPORATION
Inventor： Itaru Oshiyama , Hiroshi Tanaka
Abstract: The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.
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公开(公告)号：US10192921B2
公开(公告)日：2019-01-29
申请号：US15667556
申请日：2017-08-02
Applicant: Sony Corporation
Inventor： Itaru Oshiyama , Takashi Ando , Susumu Hiyama , Tetsuji Yamaguchi , Yuko Ohgishi , Harumi Ikeda
IPC: H01L27/146 , H01L27/148
Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.
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5.发明授权公开(公告)号：US10009564B2
公开(公告)日：2018-06-26
申请号：US15035300
申请日：2014-11-17
Applicant: SONY CORPORATION
Inventor： Itaru Oshiyama , Hirotsugu Takahashi
IPC: H04N5/3745 , H01L27/146 , H01L31/0224 , H01L31/032 , H01L31/0328 , H04N5/374
CPC classification number: H04N5/3745 , H01L27/14623 , H01L27/14625 , H01L27/1463 , H01L27/1464 , H01L31/022466 , H01L31/0322 , H01L31/0328 , H04N5/374
Abstract: The present disclosure relates to a solid-state image capturing element, a manufacturing method therefor, and an electronic device, which are capable of controlling a thickness of a depletion layer. The solid-state image capturing element includes pixels each in which a photoelectric conversion film configured to perform photoelectric conversion on incident light and a fixed charge film configured to have a predetermined fixed charge are stacked on a semiconductor substrate. The technology of the present disclosure can be applied to, for example, back surface irradiation type solid-state image capturing elements, image capturing devices such as digital still cameras or video cameras, mobile terminal devices having an image capturing function, and electronic devices using a solid-state image capturing element as an image capturing unit.
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Patent Agency Ranking
公开(公告)号：US20180175099A1
公开(公告)日：2018-06-21
申请号：US15835791
申请日：2017-12-08
Applicant: Sony Corporation
Inventor： Itaru Oshiyama , Yuki Miyanami , Susumu Hiyama , Kazuki Tanaka
IPC: H01L27/146
CPC classification number: H01L27/14683 , H01L27/1463
Abstract: A solid-state imaging device includes a sensor including an impurity diffusion layer provided in a surface layer of a semiconductor substrate; and an oxide insulating film containing carbon, the oxide insulating film being provided on the sensor.
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公开(公告)号：US09923010B2
公开(公告)日：2018-03-20
申请号：US15435476
申请日：2017-02-17
Applicant: SONY CORPORATION
Inventor： Takeshi Yanagita , Itaru Oshiyama , Takayuki Enomoto , Harumi Ikeda , Shinichiro Izawa , Atsuhiko Yamamoto , Kazunobu Ota
IPC: H01L27/146
CPC classification number: H01L27/146 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14645 , H01L27/14685 , H01L27/14689
Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.
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8.发明授权Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device 有权固态成像装置，固态成像装置的制造方法和电子装置公开(公告)号：US09595557B2
公开(公告)日：2017-03-14
申请号：US15222755
申请日：2016-07-28
Applicant: SONY CORPORATION
Inventor： Takeshi Yanagita , Itaru Oshiyama , Takayuki Enomoto , Harumi Ikeda , Shinichiro Izawa , Atsuhiko Yamamoto , Kazunobu Ota
IPC: H01L27/146
CPC classification number: H01L27/146 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14645 , H01L27/14685 , H01L27/14689
Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.
Abstract translation: 本技术涉及固态成像装置，固态成像装置的制造方法和电子装置，其可以提供具有进一步改善的特征的固态成像装置，例如减少的光学混色等。 此外，提供了使用其固态成像装置的电子装置。 根据具有基板和形成在基板上的多个光电转换器的固态成像装置，绝缘膜形成嵌入元件分离单元。 元件分离单元由具有固定电荷的绝缘膜构成，该绝缘膜形成为在从基板的光输入侧沿深度方向形成的槽部内的槽部的内壁面上涂布。
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公开(公告)号：US11121161B2
公开(公告)日：2021-09-14
申请号：US16295776
申请日：2019-03-07
Applicant: SONY CORPORATION
Inventor： Itaru Oshiyama , Hiroshi Tanaka
Abstract: The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.
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公开(公告)号：US10361242B2
公开(公告)日：2019-07-23
申请号：US15835791
申请日：2017-12-08
Applicant: Sony Corporation
Inventor： Itaru Oshiyama , Yuki Miyanami , Susumu Hiyama , Kazuki Tanaka
IPC: H01L27/146
Abstract: A solid-state imaging device includes a sensor including an impurity diffusion layer provided in a surface layer of a semiconductor substrate; and an oxide insulating film containing carbon, the oxide insulating film being provided on the sensor.
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