Abstract:
The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.
Abstract:
Disclosed herein is an image display apparatus, including: a light source; and a scanning section adapted to scan a light beam emitted from the light source; the scanning section including (a) a first mirror, (b) a first light deflection section, (c) a second mirror, and (d) a second light deflection section; the second light deflection section including an external light receiving face; the second light deflection section having a plurality of translucent films provided in the inside thereof; the translucent films having a light reflectivity R2 at a wavelength of the light beam which satisfies: R2≦k×{(P2/t2)×tan(ζ2)}1/2 where k is a constant higher 0 but lower than 1, P2 an array pitch of the translucent films, t2 a thickness of the second light deflection section, and ζ2 an angle formed between the light emitting face and the translucent films.
Abstract:
A wafer is held horizontally and rotated by a substrate holding mechanism. An aqueous alkaline solution is supplied to a wafer by a nozzle and caused to flow from a central portion to a peripheral edge portion of the wafer, thereby etching the wafer. An amount of oxygen, which is equal to or more than the amount of oxygen in atmospheric air involved in the aqueous alkaline solution flowing on the wafer, is previously dissolved in the aqueous alkaline solution.
Abstract:
A transfer mold includes a body, a first layer, and a second layer. The body has a projecting-and-recessed surface. The first layer contains an inorganic material and is disposed on the projecting-and-recessed surface of the body. The second layer contains fluorine and is disposed on a surface of the first layer. The average of hardness values of the projecting-and-recessed surface on which the first and second layers are disposed is 30 Hv or higher.
Abstract:
A transfer mold includes a body, a first layer, and a second layer. The body has a projecting-and-recessed surface. The first layer contains an inorganic material and is disposed on the projecting-and-recessed surface of the body. The second layer contains fluorine and is disposed on a surface of the first layer. The average of hardness values of the projecting-and-recessed surface on which the first and second layers are disposed is 30 Hv or higher.
Abstract:
Disclosed herein is an image display apparatus, including: a light source; and a scanning section adapted to scan a light beam emitted from the light source; the scanning section including (a) a first mirror, (b) a first light deflection section, (c) a second mirror, and (d) a second light deflection section; the second light deflection section including an external light receiving face; the second light deflection section having a plurality of translucent films provided in the inside thereof; the translucent films having a light reflectivity R2 at a wavelength of the light beam which satisfies: R2≦k×{(P2/t2)×tan(ζ2)}1/2 where k is a constant higher 0 but lower than 1, P2 an array pitch of the translucent films, t2 a thickness of the second light deflection section, and ζ2 an angle formed between the light emitting face and the translucent films.
Abstract:
An optical unit having an antireflection function includes a wave surface having a wavelength equal to or shorter than a wavelength of visible light. The wave surface has a curved plane which curves in a recessed shape between an apex portion and a bottom portion of the wave surface. An inflection point of an area of a cross section obtained by cutting through the wave surface in a plane perpendicular to a direction of vibration of the wave surface is positioned toward the bottom portion of the wave surface from a center of the vibration.
Abstract:
An optical unit having an antireflection function includes a wave surface having a wavelength equal to or shorter than a wavelength of visible light. The wave surface has a curved plane which curves in a recessed shape between an apex portion and a bottom portion of the wave surface. An inflection point of an area of a cross section obtained by cutting through the wave surface in a plane perpendicular to a direction of vibration of the wave surface is positioned toward the bottom portion of the wave surface from a center of the vibration.
Abstract:
Disclosed herein is an image display apparatus, including: a light source; and a scanning section adapted to scan a light beam emitted from the light source; the scanning section including (a) a first mirror, (b) a first light deflection section, (c) a second mirror, and (d) a second light deflection section; the second light deflection section including an external light receiving face; the second light deflection section having a plurality of translucent films provided in the inside thereof; the translucent films having a light reflectivity R2 at a wavelength of the light beam which satisfies: R2≦k×{(P2/t2)×tan(ζ2)}1/2 where k is a constant higher 0 but lower than 1, P2 an array pitch of the translucent films, t2 a thickness of the second light deflection section, and ζ2 an angle formed between the light emitting face and the translucent films.
Abstract:
The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.