Invention Grant
- Patent Title: III-V nitride resonate structure based photoacoustic sensor
-
Application No.: US14824269Application Date: 2015-08-12
-
Publication No.: US10266397B2Publication Date: 2019-04-23
- Inventor: Goutam Koley , Abdul Talukdar
- Applicant: University of South Carolina
- Applicant Address: US SC Columbia
- Assignee: University of South Carolina
- Current Assignee: University of South Carolina
- Current Assignee Address: US SC Columbia
- Agency: Dority & Manning, P.A.
- Main IPC: B01L3/00
- IPC: B01L3/00 ; B81C1/00 ; G01N21/17 ; G01N29/02 ; G01N29/24 ; H01L29/20 ; H01L29/778 ; H01L29/66 ; G01N29/22 ; H01L21/02

Abstract:
A microcantilever based photoacoustic sensor is generally provided. In one embodiment, the microcantilever includes: a substrate; a GaN layer on the substrate, wherein the GaN layer defines a cantilever extending beyond an edge of the substrate, with a base area of the cantilever defined by the area spanning the edge of the substrate; a heterojunction field effect transistor (HFET) deflection transducer positioned on the cantilever; a pair of electrical contacts, each electrically connected to the HFET deflection transducer; and a microfluidic channel in fluid communication with an analyte reservoir, wherein the analyte reservoir is positioned at the base of the cantilever. A sensing system is also generally provided.
Public/Granted literature
- US20160047781A1 III-V NITRIDE RESONATE STRUCTURE BASED PHOTOACOUSTIC SENSOR Public/Granted day:2016-02-18
Information query
IPC分类: