- 专利标题: Overflow region memory management
-
申请号: US15473311申请日: 2017-03-29
-
公开(公告)号: US10268413B2公开(公告)日: 2019-04-23
- 发明人: Dongyan Jiang , Changhui Lin , Krishna Malladi , Jongmin Gim , Hongzhong Zheng
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Innovation Counsel, LLP
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F3/06 ; G06F12/10 ; G06F13/16 ; G06F13/42
摘要:
A memory module includes a host interface configured to provide an interface to a host computer; one or more memory devices; a deduplication engine configured to provide a virtual memory capacity of the memory module that is larger than a physical size of the one or more memory devices; a memory controller for controlling access to the one or more memory devices; a volatile memory comprising a hash table, an overflow memory region, and a credit unit, wherein the overflow memory region stores user data when a hash collision occurs or the hash table is full, and wherein the credit unit stores an address of an invalidated entry in the overflow memory region; and a control logic is configured to control the overflow memory region and the credit unit and generate a warning indicating a status of the overflow memory region and the credit unit.
公开/授权文献
- US20180217777A1 Overflow Region Memory Management 公开/授权日:2018-08-02
信息查询