Invention Grant
- Patent Title: Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels
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Application No.: US15717843Application Date: 2017-09-27
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Publication No.: US10269928B2Publication Date: 2019-04-23
- Inventor: Soo-Hun Hong , Hee-Soo Kang , Hyun-Jo Kim , Sang-Pil Sim , Hee-Don Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2013-0099402 20130822
- Main IPC: H01L29/161
- IPC: H01L29/161 ; H01L29/66 ; H01L27/088 ; H01L29/06 ; H01L21/8234 ; H01L21/8238 ; H01L27/092 ; H01L29/08 ; H01L29/16 ; H01L21/762 ; H01L29/78 ; H01L29/165
Abstract:
A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.
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