- 专利标题: Charge injection compensation circuit
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申请号: US15370564申请日: 2016-12-06
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公开(公告)号: US10277223B2公开(公告)日: 2019-04-30
- 发明人: Jofrey G. Santillan , David Aherne
- 申请人: Analog Devices Global
- 申请人地址: BM Hamilton
- 专利权人: Analog Devices Global
- 当前专利权人: Analog Devices Global
- 当前专利权人地址: BM Hamilton
- 代理机构: Schwegman Lundberg & Woessner, P.A.
- 主分类号: G11C27/02
- IPC分类号: G11C27/02 ; G06F3/042 ; H02M3/07 ; G01R31/30 ; H03M1/00 ; H03K17/16
摘要:
A charge injection compensation circuit compensates for charge injection by a field-effect transistor (FET) switch regardless of a supply voltage. The charge injection compensation circuit includes a main switch that injects charge into an electronic circuit when switched off, and a charge storage device that stores the injected charge until it can be dissipated to a dissipating node. Upon the main switch being controlled to switch off, a pulse generator circuit controls a charge storage switch to switch on to transfer the charge injected from the main switch to the charge storage device and then switch off. A dissipation circuit dissipates the charge from the charge storage device to a dissipating node.
公开/授权文献
- US20180159523A1 CHARGE INJECTION COMPENSATION CIRCUIT 公开/授权日:2018-06-07
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