公开(公告)号：US10277223B2

公开(公告)日：2019-04-30

申请号：US15370564

申请日：2016-12-06

Applicant: Analog Devices Global

Inventor： Jofrey G. Santillan ,  David Aherne

IPC: G11C27/02 ,  G06F3/042 ,  H02M3/07 ,  G01R31/30 ,  H03M1/00 ,  H03K17/16

Abstract: A charge injection compensation circuit compensates for charge injection by a field-effect transistor (FET) switch regardless of a supply voltage. The charge injection compensation circuit includes a main switch that injects charge into an electronic circuit when switched off, and a charge storage device that stores the injected charge until it can be dissipated to a dissipating node. Upon the main switch being controlled to switch off, a pulse generator circuit controls a charge storage switch to switch on to transfer the charge injected from the main switch to the charge storage device and then switch off. A dissipation circuit dissipates the charge from the charge storage device to a dissipating node.

公开(公告)号：US20180159523A1

公开(公告)日：2018-06-07

申请号：US15370564

申请日：2016-12-06

Applicant: Analog Devices Global

Inventor： Jofrey G. Santillan ,  David Aherne

IPC: H03K17/16

CPC classification number: H03K17/165 ,  H03K2217/0054

Abstract: A charge injection compensation circuit compensates for charge injection by a field-effect transistor (FET) switch regardless of a supply voltage. The charge injection compensation circuit includes a main switch that injects charge into an electronic circuit when switched off, and a charge storage device that stores the injected charge until it can be dissipated to a dissipating node. Upon the main switch being controlled to switch off, a pulse generator circuit controls a charge storage switch to switch on to transfer the charge injected from the main switch to the charge storage device and then switch off. A dissipation circuit dissipates the charge from the charge storage device to a dissipating node.