Invention Grant
- Patent Title: Charge injection compensation circuit
-
Application No.: US15370564Application Date: 2016-12-06
-
Publication No.: US10277223B2Publication Date: 2019-04-30
- Inventor: Jofrey G. Santillan , David Aherne
- Applicant: Analog Devices Global
- Applicant Address: BM Hamilton
- Assignee: Analog Devices Global
- Current Assignee: Analog Devices Global
- Current Assignee Address: BM Hamilton
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C27/02
- IPC: G11C27/02 ; G06F3/042 ; H02M3/07 ; G01R31/30 ; H03M1/00 ; H03K17/16

Abstract:
A charge injection compensation circuit compensates for charge injection by a field-effect transistor (FET) switch regardless of a supply voltage. The charge injection compensation circuit includes a main switch that injects charge into an electronic circuit when switched off, and a charge storage device that stores the injected charge until it can be dissipated to a dissipating node. Upon the main switch being controlled to switch off, a pulse generator circuit controls a charge storage switch to switch on to transfer the charge injected from the main switch to the charge storage device and then switch off. A dissipation circuit dissipates the charge from the charge storage device to a dissipating node.
Public/Granted literature
- US20180159523A1 CHARGE INJECTION COMPENSATION CIRCUIT Public/Granted day:2018-06-07
Information query