Invention Grant
- Patent Title: Hybrid memory device using different types of capacitors
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Application No.: US15252886Application Date: 2016-08-31
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Publication No.: US10282108B2Publication Date: 2019-05-07
- Inventor: Kevin J. Ryan , Kirk D. Prall , Durai Vishak Nirmal Ramaswamy , Robert Quinn
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C11/404 ; H01L49/02 ; G11C11/22 ; G11C11/4096 ; G11C14/00 ; H01L23/528 ; H01L27/108 ; H01L27/11507

Abstract:
The hybrid memory device may include volatile and non-volatile memory cells on a single substrate, or die. The non-volatile memory cells may have ferroelectric capacitors and the volatile memory cells may have paraelectric or linear dielectric capacitors for their respective logic storage components. In some examples, the volatile memory cells may be used as a cache for the non-volatile memory cells. Or the non-volatile memory cells may be used as a back-up for the volatile memory cells. By placing both types of cells on a single die, rather than separate dies, various performance metrics may be improved, including those related to power consumption and operation speed.
Public/Granted literature
- US20180059958A1 HYBRID MEMORY DEVICE Public/Granted day:2018-03-01
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