Invention Grant
- Patent Title: Precursors of manganese and manganese-based compounds for copper diffusion barrier layers and methods of use
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Application No.: US15919902Application Date: 2018-03-13
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Publication No.: US10283352B2Publication Date: 2019-05-07
- Inventor: Feng Q. Liu , Ben-Li Sheu , David Knapp , David Thompson
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; C23C16/00 ; H01L21/02 ; C23C16/18 ; H01L21/285 ; H01L23/532 ; H01L21/768 ; C23C16/34
Abstract:
Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.
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