Invention Grant
- Patent Title: Plasma etching method and plasma etching apparatus
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Application No.: US15063669Application Date: 2016-03-08
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Publication No.: US10283368B2Publication Date: 2019-05-07
- Inventor: Shunichi Mikami
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck P.C.
- Priority: JP2015-046136 20150309
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/683 ; H01L21/027
Abstract:
There is provided a plasma etching method for etching a base film by a plasma using a photoresist as a mask. The method includes etching the base film by the plasma, under a first processing condition in which a selectivity of the photoresist to the base film is set to a first selectivity, while using as a mask the photoresist formed in a predetermined pattern by exposure and development and a scum remaining in the photoresist, without performing a process of removing the scum; and switching, during the etching of the base film, the first processing condition to a second processing condition in which the selectivity of the photoresist to the base film is set to a second selectivity lower than the first selectivity and further etching the base film by a plasma while using the photoresist as a mask under the second processing condition.
Public/Granted literature
- US20160268140A1 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS Public/Granted day:2016-09-15
Information query
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