Invention Grant
- Patent Title: Interconnects formed by a metal replacement process
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Application No.: US15705956Application Date: 2017-09-15
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Publication No.: US10283372B2Publication Date: 2019-05-07
- Inventor: Sean Xuan Lin , Xunyuan Zhang , Mark V. Raymond , Errol Todd Ryan , Nicholas V. LiCausi
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L27/10
- IPC: H01L27/10 ; H01L21/3205 ; H01L21/768 ; H01L23/532
Abstract:
Methods of forming interconnects. An interconnect opening is formed in a dielectric layer. A first conductor layer composed of a first metal is formed in the interconnect opening. A second conductor layer is formed inside the interconnect opening by displacing the first metal of the first conductor layer and replacing the first metal with a second metal different from the first metal.
Public/Granted literature
- US20190088500A1 INTERCONNECTS FORMED BY A METAL REPLACEMENT PROCESS Public/Granted day:2019-03-21
Information query
IPC分类:
