Invention Grant
- Patent Title: Semiconductor devices including first sensor with infrared photodiode and second sensor with color photodiode
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Application No.: US15450451Application Date: 2017-03-06
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Publication No.: US10283554B2Publication Date: 2019-05-07
- Inventor: Young Gu Jin , Doo Won Kwon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2016-0113000 20160902
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/33 ; H04N9/04

Abstract:
A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.
Public/Granted literature
- US20180069046A1 SEMICONDUCTOR DEVICES Public/Granted day:2018-03-08
Information query
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