公开(公告)号：US09865638B2

公开(公告)日：2018-01-09

申请号：US15352986

申请日：2016-11-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doo Won Kwon

IPC: H01L27/146 ,  H01L25/16 ,  H01L23/00

CPC classification number: H01L27/14634 ,  H01L24/13 ,  H01L24/16 ,  H01L25/167 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06544

Abstract: A semiconductor device includes a first semiconductor substrate having a first wiring layer which includes a first conductive pad, a second semiconductor substrate disposed on the first semiconductor substrate and including a second wiring layer which includes a second conductive pad, a first oxide layer disposed on the second semiconductor substrate and containing a second end of an intermediate connection which extends vertically through the second semiconductor substrate and has a first end electrically connected to the second conductive pad, and a third semiconductor substrate disposed on the first oxide layer and including a third wiring layer which includes a third conductive pad. The second end of the intermediate connection layer is electrically connected to the third conductive pad via a metal bond.

公开(公告)号：US11810941B2

公开(公告)日：2023-11-07

申请号：US17217167

申请日：2021-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Sun Keel ,  Doo Won Kwon ,  Hyun Surk Ryu ,  Young Chan Kim ,  Young Gu Jin

IPC: H01L27/146 ,  H01L23/00 ,  H04N13/204 ,  G06T7/521 ,  H04N25/75

CPC classification number: H01L27/14647 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H04N13/204 ,  G06T7/521 ,  G06T2207/10024 ,  G06T2207/10028 ,  H01L24/14 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/06131 ,  H01L2224/13013 ,  H01L2224/13016 ,  H01L2224/13147 ,  H01L2224/14131 ,  H01L2224/16014 ,  H01L2224/16145 ,  H04N25/75

Abstract: A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

公开(公告)号：US10566370B2

公开(公告)日：2020-02-18

申请号：US16018709

申请日：2018-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Yoon ,  Doo Won Kwon ,  Kwan Sik Kim ,  Tae Young Song ,  Min Jun Choi

IPC: H01L27/146 ,  H01L27/30 ,  H01L27/28 ,  H01L31/024

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

公开(公告)号：US10998366B2

公开(公告)日：2021-05-04

申请号：US16732561

申请日：2020-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Yoon ,  Doo Won Kwon ,  Kwan Sik Kim ,  Tae Young Song ,  Min Jun Choi

IPC: H01L27/146 ,  H01L27/30 ,  H01L27/28 ,  H01L31/024 ,  H01L51/42 ,  H01L31/102

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

公开(公告)号：US20210043673A1

公开(公告)日：2021-02-11

申请号：US16837299

申请日：2020-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doo Won Kwon ,  In Gyu Baek

IPC: H01L27/146 ,  H01L23/00

Abstract: An image sensor includes a first substrate structure, which includes a first substrate having a photoelectric converter and a first wiring structure therein. The first wiring structure includes upper connection wiring, which is electrically connected to the photoelectric converter, a first upper bonding pad and a second upper bonding pad. A second substrate structure is provided, which includes a second substrate and a second wiring structure bonded to the first wiring structure. The second wiring structure includes: lower connection wiring, which is electrically connected to the upper connection wiring, a first lower bonding pad, which is directly connected to the first upper bonding pad, and a second lower bonding pad, which is directly connected to the second upper bonding pad. A width of the first upper bonding pad is unequal to a width of the second upper bonding pad, and a thickness of the first upper bonding pad is unequal to a thickness of the second upper bonding pad.

公开(公告)号：US11417699B2

公开(公告)日：2022-08-16

申请号：US16826455

申请日：2020-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Min Lee ,  Doo Won Kwon ,  Seok Jin Kwon ,  Kyoung Won Na ,  In Gyu Baek

IPC: H01L27/146

Abstract: An image sensor includes a substrate, first and second insulating structures, a first wiring structure, a through via, and first and second connection patterns. The substrate includes a sensor array region and a pad region. The first insulating structure is disposed on a second surface of the substrate. The first wiring structure is formed in the first insulating structure and includes first conductive layers and first vias. The through via passes through the substrate in the pad region and connects to the first wiring structure. The first connection pattern is connected to the first wiring structure. The second insulating structure is disposed on a fourth surface of the first insulating structure. The second connection pattern is connected to the first connection pattern. The first conductive layers include a first wiring, and a second wiring spaced farther from the substrate than the first wiring. The through via contacts the second wiring.

公开(公告)号：US10991748B2

公开(公告)日：2021-04-27

申请号：US16124226

申请日：2018-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Sun Keel ,  Doo Won Kwon ,  Hyun Surk Ryu ,  Young Chan Kim ,  Young Gu Jin

IPC: H01L27/146 ,  H01L23/00 ,  H04N13/204 ,  G06T7/521 ,  H04N5/378

Abstract: A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

公开(公告)号：US10707261B2

公开(公告)日：2020-07-07

申请号：US16284319

申请日：2019-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu Jin ,  Doo Won Kwon

IPC: H01L27/146 ,  H04N5/33 ,  H04N9/04

Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.

公开(公告)号：US10283554B2

公开(公告)日：2019-05-07

申请号：US15450451

申请日：2017-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu Jin ,  Doo Won Kwon

IPC: H01L27/146 ,  H04N5/33 ,  H04N9/04

Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.

公开(公告)号：US20230395639A1

公开(公告)日：2023-12-07

申请号：US18450730

申请日：2023-08-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doo Won Kwon ,  In Gyu Baek

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14636 ,  H01L24/05 ,  H01L27/14605

Abstract: An image sensor includes a first substrate structure, which includes a first substrate having a photoelectric converter and a first wiring structure therein. The first wiring structure includes upper connection wiring, which is electrically connected to the photoelectric converter, a first upper bonding pad and a second upper bonding pad. A second substrate structure is provided, which includes a second substrate and a second wiring structure bonded to the first wiring structure. The second wiring structure includes: lower connection wiring, which is electrically connected to the upper connection wiring, a first lower bonding pad, which is directly connected to the first upper bonding pad, and a second lower bonding pad, which is directly connected to the second upper bonding pad. A width of the first upper bonding pad is unequal to a width of the second upper bonding pad, and a thickness of the first upper bonding pad is unequal to a thickness of the second upper bonding pad.