公开(公告)号：US11525922B2

公开(公告)日：2022-12-13

申请号：US16427576

申请日：2019-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu Jin ,  Young Chan Kim ,  Tae Sub Jung ,  Yong Hun Kwon ,  Sung Young Seo ,  Moo Sup Lim ,  Sung Ho Choi

IPC: H01L27/146 ,  G01S17/89 ,  G01S17/08

Abstract: An image sensor may include a first photo gate and a second photo gate each extending substantially in parallel in a first direction, the first photo gate and the second photo gate isolated from direct contact with each other in a second direction, the second direction substantially orthogonal to the first direction, a first overflow gate between the first photo gate and the second photo gate, the first overflow gate extending in the first direction, a first charge collection region on the first photo gate, a second charge collection region on the second photo gate and isolated from direct contact with the first charge collection region in the second direction, a first floating diffusion region that may receive first charge from the first charge collection region and output the first charge, and a second floating diffusion region that may receive second charge from the second charge collection region and output the second charge.

公开(公告)号：US11456327B2

公开(公告)日：2022-09-27

申请号：US16524806

申请日：2019-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu Jin ,  Young Chan Kim ,  Yong Hun Kwon ,  Eung Kyu Lee ,  Chang Keun Lee ,  Moo Sup Lim ,  Tae Sub Jung

IPC: H01L27/146 ,  H01L31/167

Abstract: An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.

公开(公告)号：US20250058711A1

公开(公告)日：2025-02-20

申请号：US18933619

申请日：2024-10-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Wook LIM ,  Young Gu Jin

IPC: B60R1/22 ,  H01L27/146

Abstract: A unit pixel includes a first photoelectric converter, a first transfer transistor disposed between to the first photoelectric converter and a first node, a connection transistor disposed between and connected to a second node and the first node, a second transfer transistor disposed between and connected to a third node and the second node, a second photoelectric converter connected to the third node, and a storage metal-oxide semiconductor (MOS) capacitor connected to the third node. The storage MOS capacitor stores charges from the second photoelectric converter. For a first time period, first charges accumulated in the first photoelectric converter are transferred to the first node, for a second time period, second charges accumulated in the first photoelectric converter are transferred to the first node and the second node, and for a third time period, third charges accumulated in the second photoelectric converter are transferred to the first to third nodes.

公开(公告)号：US11810941B2

公开(公告)日：2023-11-07

申请号：US17217167

申请日：2021-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Sun Keel ,  Doo Won Kwon ,  Hyun Surk Ryu ,  Young Chan Kim ,  Young Gu Jin

IPC: H01L27/146 ,  H01L23/00 ,  H04N13/204 ,  G06T7/521 ,  H04N25/75

CPC classification number: H01L27/14647 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H04N13/204 ,  G06T7/521 ,  G06T2207/10024 ,  G06T2207/10028 ,  H01L24/14 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/06131 ,  H01L2224/13013 ,  H01L2224/13016 ,  H01L2224/13147 ,  H01L2224/14131 ,  H01L2224/16014 ,  H01L2224/16145 ,  H04N25/75

Abstract: A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

公开(公告)号：US11631711B2

公开(公告)日：2023-04-18

申请号：US17366868

申请日：2021-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae Shik Kim ,  Young Gu Jin

IPC: H01L27/146 ,  H04N25/771 ,  H04N25/75 ,  H04N25/40 ,  H04N25/76 ,  H04N25/77

Abstract: An image sensor comprises an upper chip including pixels; and a lower chip placed below the upper chip, wherein a pixel of the pixels includes an optical conversion element configured that light is incident on the optical conversion element, a first storage gate or a first storage node which is electrically connected to the optical conversion element and configured to store electric charge transferred from the optical conversion element during a first time interval, and a second storage gate or a second storage node which is electrically connected to the optical conversion element and configured to store the electric charge transferred from the optical conversion element during a second time interval different from the first time interval, the pixel is configured to generate a first pixel signal on the basis of the electric charge stored in the first storage gate, the lower chip includes a frame buffer.

公开(公告)号：US10950640B2

公开(公告)日：2021-03-16

申请号：US16551114

申请日：2019-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Gu Jin ,  Yong Hun Kwon ,  Young Chan Kim ,  Sae Young Kim ,  Sung Young Seo ,  Moo Sup Lim ,  Tae Sub Jung ,  Sung Ho Choi

IPC: H01L27/146

Abstract: An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.

公开(公告)号：US10212367B2

公开(公告)日：2019-02-19

申请号：US15435397

申请日：2017-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Hee Lee ,  Young Gu Jin ,  Yong Wan Jin

IPC: H04N5/33 ,  H01L27/00 ,  H01L27/28 ,  H04N5/359 ,  H04N5/378 ,  H04N5/374 ,  H01L27/146 ,  H01L27/30

Abstract: An image sensor includes a plurality of pixels, each pixel including a light sensing structure including first, second and third light sensing elements sequentially stacked on a substrate, the light sensing structure having a first surface adjacent to a readout circuit and a second surface including a light receiving portion between first and second circumferential portions, a first through via on the first circumferential portion, extending from the first surface to connect with the first light sensing element, and configured to transfer charges of the first light sensing element to the readout circuit, and a vertical transfer gate on a second circumferential portion and configured to transfer charges of the second light sensing element to the readout circuit, the first through via and the vertical transfer gate of each pixel being arranged in a 1-shaped or L-shaped pattern in the first and second circumferential portions.

公开(公告)号：US12151617B2

公开(公告)日：2024-11-26

申请号：US17840033

申请日：2022-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Wook Lim ,  Young Gu Jin

IPC: H04N5/335 ,  B60R1/22 ,  H01L27/146

Abstract: A unit pixel includes a first photoelectric converter, a first transfer transistor disposed between to the first photoelectric converter and a first node, a connection transistor disposed between and connected to a second node and the first node, a second transfer transistor disposed between and connected to a third node and the second node, a second photoelectric converter connected to the third node, and a storage metal-oxide semiconductor (MOS) capacitor connected to the third node. The storage MOS capacitor stores charges from the second photoelectric converter. For a first time period, first charges accumulated in the first photoelectric converter are transferred to the first node, for a second time period, second charges accumulated in the first photoelectric converter are transferred to the first node and the second node, and for a third time period, third charges accumulated in the second photoelectric converter are transferred to the first to third nodes.

公开(公告)号：US11881497B2

公开(公告)日：2024-01-23

申请号：US17409842

申请日：2021-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Gu Jin ,  Young Chan Kim

IPC: H01L27/146 ,  H04N25/75 ,  H04N25/77

CPC classification number: H01L27/14643 ,  H01L27/14636 ,  H04N25/75 ,  H04N25/77

Abstract: An image sensor, which stores electric charge overflowing from a photoelectric conversion layer, includes: (1) a substrate including a first surface and a second surface, which is opposite to the first surface and upon which light is incident, (2) a photoelectric conversion layer in the substrate, (3) an isolation film disposed on the substrate, along the photoelectric conversion layer, (4) a storage conductive pattern disposed in the isolation film, (5) a transfer gate disposed on a first surface of the substrate, (6) a first impurity-injected area disposed between the photoelectric conversion layer and the isolation film, and (7) a second impurity-injected area disposed on the first surface of the substrate and connected to the transfer gate. The first and second impurity-injected areas are electrically connected.

公开(公告)号：US10529755B2

公开(公告)日：2020-01-07

申请号：US15704690

申请日：2017-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Yon Lee ,  Gwi Deok Lee ,  Masaru Ishii ,  Young Gu Jin

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/3745 ,  H04N5/361 ,  H04N5/378 ,  H04N5/369

Abstract: An image sensor includes a first photoelectric conversion layer that is configured to convert light to a first signal. The image sensor also includes a transfer transistor. The transfer transistor includes a storage node region which stores the first signal. The transfer transistor also includes a transfer gate which transfers the stored first signal, and a floating diffusion region that receives the first signal. The image sensor includes a reset transistor that resets the floating diffusion region, and a drive transistor which receives a pixel voltage. The drive transistor generates an output voltage. The image sensor also includes a selection transistor which outputs the output voltage. A reset drain voltage is applied to a drain electrode of the reset transistor, and is independent of the pixel voltage. The reset drain voltage ranges from about 0.1V to about 1.0V.