A thin film transistor includes a first oxide semiconductor, a source electrode, a drain electrode, a gate insulating film and a gate electrode. A second oxide semiconductor layer is between the first oxide semiconductor layer and the source electrode. A third oxide semiconductor layer is between the first oxide semiconductor layer and the drain electrode. The content ratio of oxygen/Indium in each of the second semiconductor layer and the third oxide semiconductor layer is equal to or larger than that of the first semiconductor layer. A thickness of each of the second semiconductor layer and the third oxide semiconductor layer is bigger than that of the first semiconductor layer.