Invention Grant
- Patent Title: Thin film transistor having stable threshold voltage and less parasitic capacitance, and display device using the same
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Application No.: US15172576Application Date: 2016-06-03
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Publication No.: US10283644B2Publication Date: 2019-05-07
- Inventor: Isao Suzumura , Norihiro Uemura , Takeshi Noda , Hidekazu Miyake , Yohei Yamaguchi
- Applicant: Japan Display Inc.
- Applicant Address: JP Tokyo
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Tokyo
- Agency: Ulmer & Berne LLP
- Priority: JP2013-083282 20130411
- Main IPC: G02F1/1335
- IPC: G02F1/1335 ; H01L29/786 ; H01L27/12 ; G02F1/1333 ; G02F1/1337 ; G02F1/1343 ; G02F1/1368 ; H01L29/24

Abstract:
A thin film transistor includes a first oxide semiconductor, a source electrode, a drain electrode, a gate insulating film and a gate electrode. A second oxide semiconductor layer is between the first oxide semiconductor layer and the source electrode. A third oxide semiconductor layer is between the first oxide semiconductor layer and the drain electrode. The content ratio of oxygen/Indium in each of the second semiconductor layer and the third oxide semiconductor layer is equal to or larger than that of the first semiconductor layer. A thickness of each of the second semiconductor layer and the third oxide semiconductor layer is bigger than that of the first semiconductor layer.
Public/Granted literature
- US20160284867A1 THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME Public/Granted day:2016-09-29
Information query
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