According to one embodiment, a nonvolatile semiconductor memory device includes first and second gate electrode layers, an inter-layer insulating layer, a channel layer, a tunneling insulating layer, first and second charge storage portions, and a blocking insulating layer. The channel layer is separated from the first and second gate electrode layers, and the inter-layer insulating layer. The tunneling insulating layer is provided between the first gate electrode layer and the channel layer. The first charge storage portion is provided between the first gate electrode layer and the tunneling insulating layer. The second charge storage portion is provided the second gate electrode layer and the tunneling insulating layer. The blocking insulating layer is provided between the inter-layer insulating layer and the tunneling insulating layer, between the first gate electrode layer and the first charge storage portion, between the inter-layer insulating layer and the first charge storage portion.