公开(公告)号：US09997533B2

公开(公告)日：2018-06-12

申请号：US15071006

申请日：2016-03-15

申请人： Toshiba Memory Corporation

发明人： Yasuhito Yoshimizu ,  Satoshi Wakatsuki ,  Yohei Sato ,  Keiichi Sawa

IPC分类号： H01L21/28 ,  H01L27/11582 ,  H01L21/02 ,  H01L21/311 ,  H01L21/764

CPC分类号： H01L27/11582 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/28282 ,  H01L21/31111 ,  H01L21/764

摘要： According to one embodiment, the plurality of charge storage films are separated in a stacking direction with a second air gap interposed. The plurality of insulating films are provided on side surfaces of electrode layers opposing the charge storage films, on portions of surfaces of the electrode layers continuous from the side surfaces and opposing a first air gap between the electrode layers, and on corners of the electrode layers between the portions and the side surfaces. The plurality of insulating films are divided in the stacking direction with a third air gap interposed and without the charge storage films being interposed. The third air gap communicates with the first air gap and the second air gap between the first air gap and the second air gap.

公开(公告)号：US09892930B1

公开(公告)日：2018-02-13

申请号：US15412396

申请日：2017-01-23

申请人： Toshiba Memory Corporation

发明人： Keiichi Sawa ,  Shinji Mori ,  Masayuki Tanaka ,  Katsuyuki Kitamoto

IPC分类号： H01L27/115 ,  H01L21/28 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/522 ,  H01L23/528

CPC分类号： H01L21/28282 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/1157 ,  H01L27/11582

摘要： A semiconductor memory device includes a first electrode layer; a second electrode layer provided above the first electrode layer; a first insulating oxide layer provided between the first and second electrode layers; a semiconductor layer extending through the first electrode layer, the first insulating oxide layer and the second electrode layer that are stacked in the first direction; and a second insulating oxide layer extending in the first direction between the semiconductor layer and the first insulating oxide layer, the second insulating oxide layer being in contact with the first insulating oxide layer. At least one of the first insulating oxide layer and the second insulating oxide layer includes nitrogen atoms. The nitrogen atoms are distributed around an interface between the first insulating oxide layer and the second insulating oxide layer, or distributed in the vicinity of the interface.

公开(公告)号：US10396280B2

公开(公告)日：2019-08-27

申请号：US15695996

申请日：2017-09-05

申请人： TOSHIBA MEMORY CORPORATION

发明人： Shinji Mori ,  Masayuki Tanaka ,  Kazuhiro Matsuo ,  Kenichiro Toratani ,  Keiichi Sawa ,  Kazuhisa Matsuda ,  Atsushi Takahashi ,  Yuta Saito

IPC分类号： H01L45/00 ,  H01L27/24

摘要： A semiconductor memory device includes a plurality of first interconnections extending in a first direction, and a second interconnection extending in a second direction different from the first direction. The device further includes a resistance change film provided between the plurality of first interconnections and the second interconnection, the resistance change film including (a) silicon and a semiconductor layer including one or more elements selected from among oxygen, carbon, nitrogen, phosphorus, boron, and germanium, or (b) a first layer containing the germanium and a second layer containing the silicon.

公开(公告)号：US10312255B2

公开(公告)日：2019-06-04

申请号：US15800162

申请日：2017-11-01

申请人： TOSHIBA MEMORY CORPORATION

发明人： Yasuhito Yoshimizu ,  Satoshi Wakatsuki ,  Yohei Sato ,  Keiichi Sawa

IPC分类号： H01L27/11582 ,  H01L21/02 ,  H01L21/311 ,  H01L21/28 ,  H01L21/764

摘要： According to one embodiment, the plurality of charge storage films are separated in a stacking direction with a second air gap interposed. The plurality of insulating films are provided on side surfaces of electrode layers opposing the charge storage films, on portions of surfaces of the electrode layers continuous from the side surfaces and opposing a first air gap between the electrode layers, and on corners of the electrode layers between the portions and the side surfaces. The plurality of insulating films are divided in the stacking direction with a third air gap interposed and without the charge storage films being interposed. The third air gap communicates with the first air gap and the second air gap between the first air gap and the second air gap.

公开(公告)号：US20190027538A1

公开(公告)日：2019-01-24

申请号：US15892016

申请日：2018-02-08

申请人： TOSHIBA MEMORY CORPORATION

发明人： Keiichi Sawa ,  Kazuhisa Matsuda ,  Atsushi Takahashi ,  Takaumi Morita ,  Masayuki Tanaka ,  Shinji Mori ,  Kazuhiro Matsuo ,  Yuta Saito ,  Kenichiro Toratani ,  Hisashi Okuchi

IPC分类号： H01L27/24 ,  G11C13/00 ,  H01L45/00

摘要： In one embodiment, a semiconductor storage device includes a first interconnect extending in a first direction, a plurality of second interconnects extending in a second direction different from the first direction, and a plurality of first insulators provided alternately with the second interconnects. The device further includes a resistance change film provided between the first interconnect and at least one of the second interconnects and including a first metal layer or a first semiconductor layer that includes a first face provided on a first interconnect side and a second face provided on a second interconnect side, at least any of the first face and the second face having a curved plane shape.

公开(公告)号：US11011532B2

公开(公告)日：2021-05-18

申请号：US16601748

申请日：2019-10-15

申请人： Toshiba Memory Corporation

发明人： Keiichi Sawa

IPC分类号： H01L27/11524 ,  H01L27/11556 ,  H01L29/66 ,  H01L29/788 ,  H01L27/11519

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of U-shaped memory strings, each of the plurality of U-shaped memory strings including a first columnar body, a second columnar body, and a conductive connection body. The conductive connection body connects the first columnar body and the second columnar body. A plurality of first memory cells are connected in series in the first columnar body and are composed of a plurality of first conductive layers, a first inter-gate insulating film, a plurality of first floating electrodes, a first tunnel insulating film, and a first memory channel layer. The plurality of first floating electrodes are separated from the plurality of first conductive layers by the first inter-gate insulating film. A plurality of second memory cells are connected in series in the second columnar body, similarly to the plurality of first memory cells.

公开(公告)号：US10964716B2

公开(公告)日：2021-03-30

申请号：US16275509

申请日：2019-02-14

申请人： Toshiba Memory Corporation

发明人： Shinji Mori ,  Kazuhiro Matsuo ,  Yuta Saito ,  Keiichi Sawa ,  Kazuhisa Matsuda ,  Atsushi Takahashi ,  Masayuki Tanaka ,  Kenichiro Toratani

IPC分类号： H01L27/11582 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/311 ,  H01L29/423

摘要： A semiconductor device comprises a substrate. A plurality of electrode layers and a plurality of insulating layers are formed in an alternating stack above the substrate. A semiconductor column extends through the plurality of electrode layers and the plurality of insulating layers. The semiconductor column comprises a single-crystal semiconductor material on an outer peripheral surface facing the electrode and insulating layers. First insulating films are formed between the semiconductor column and the electrode layers. The first insulating films are spaced from each other along the column length. Each first insulating film corresponds to one electrode layer. A charge storage layer is between each of the first insulating films and the electrode layers. A second insulating film is between the charge storage layer and each of the electrode layers.

公开(公告)号：US10910401B2

公开(公告)日：2021-02-02

申请号：US16559165

申请日：2019-09-03

申请人： TOSHIBA MEMORY CORPORATION

发明人： Keiichi Sawa ,  Kazuhiro Matsuo ,  Kazuhisa Matsuda ,  Hiroyuki Yamashita ,  Yuta Saito ,  Shinji Mori ,  Masayuki Tanaka ,  Kenichiro Toratani ,  Atsushi Takahashi ,  Shouji Honda

IPC分类号： H01L27/11582 ,  H01L29/792 ,  H01L27/11578 ,  H01L27/11519 ,  H01L27/1157

摘要： In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

公开(公告)号：US20180053781A1

公开(公告)日：2018-02-22

申请号：US15800162

申请日：2017-11-01

申请人： TOSHIBA MEMORY CORPORATION

发明人： Yasuhito Yoshimizu ,  Satoshi Wakatsuki ,  Yohei Sato ,  Keiichi Sawa

IPC分类号： H01L21/764 ,  H01L21/311 ,  H01L21/02 ,  H01L21/28

CPC分类号： H01L27/11582 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/28282 ,  H01L21/31111 ,  H01L21/764

摘要： According to one embodiment, the plurality of charge storage films are separated in a stacking direction with a second air gap interposed. The plurality of insulating films are provided on side surfaces of electrode layers opposing the charge storage films, on portions of surfaces of the electrode layers continuous from the side surfaces and opposing a first air gap between the electrode layers, and on corners of the electrode layers between the portions and the side surfaces. The plurality of insulating films are divided in the stacking direction with a third air gap interposed and without the charge storage films being interposed. The third air gap communicates with the first air gap and the second air gap between the first air gap and the second air gap.

公开(公告)号：US10923487B2

公开(公告)日：2021-02-16

申请号：US16287914

申请日：2019-02-27

申请人： Toshiba Memory Corporation

发明人： Hiroyuki Yamashita ,  Shinji Mori ,  Keiichi Sawa ,  Kazuhiro Matsuo ,  Kazuhisa Matsuda ,  Yuta Saito ,  Atsushi Takahashi ,  Masayuki Tanaka

IPC分类号： H01L27/11556 ,  H01L27/11582

摘要： A semiconductor memory device includes a channel layer and a gate electrode. A first insulating layer is between the semiconductor layer and the gate electrode. A second insulating layer is between the first insulating layer and the gate electrode. A storage region is between the first insulating layer and the second insulating layer. The storage region comprises metal or semiconductor material. A coating layer comprises silicon and nitrogen and surrounds the storage region. The coating layer is between the storage region and the second insulating layer and between the storage region and the first insulating layer.