Invention Grant
- Patent Title: Thin film formation method, thin film, and glass plate having thin film attached thereto
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Application No.: US15157936Application Date: 2016-05-18
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Publication No.: US10287676B2Publication Date: 2019-05-14
- Inventor: Hiroaki Iwaoka , Atsushi Seki , Kousuke Chonan , Reo Usui , Toshio Suzuki , Tomomi Abe
- Applicant: AGC Inc.
- Applicant Address: JP Chiyoda-ku
- Assignee: AGC Inc.
- Current Assignee: AGC Inc.
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-238795 20131119; JP2014-075636 20140401
- Main IPC: B32B15/04
- IPC: B32B15/04 ; B32B17/06 ; C23C16/40 ; C03C17/245 ; C03C17/34 ; C09D1/00
Abstract:
The present invention relates to a method for forming a TiO2 thin film on a substrate by using an atmospheric pressure CVD method, in which a raw material gas contains titanium tetraisopropoxide (TTIP) and a chloride of a metal M vaporizable in a temperature range of 100 to 400° C. and the amount of the chloride of the metal M is from 0.01 to 0.18 as a concentration ratio to the titanium tetraisopropoxide (TTIP) (chloride of metal M (mol %)/TTIP (mol %)).
Public/Granted literature
- US20160258055A1 THIN FILM FORMATION METHOD, THIN FILM, AND GLASS PLATE HAVING THIN FILM ATTACHED THERETO Public/Granted day:2016-09-08
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