公开(公告)号：US10287676B2

公开(公告)日：2019-05-14

申请号：US15157936

申请日：2016-05-18

Applicant: AGC Inc.

Inventor： Hiroaki Iwaoka ,  Atsushi Seki ,  Kousuke Chonan ,  Reo Usui ,  Toshio Suzuki ,  Tomomi Abe

IPC: B32B15/04 ,  B32B17/06 ,  C23C16/40 ,  C03C17/245 ,  C03C17/34 ,  C09D1/00

Abstract: The present invention relates to a method for forming a TiO2 thin film on a substrate by using an atmospheric pressure CVD method, in which a raw material gas contains titanium tetraisopropoxide (TTIP) and a chloride of a metal M vaporizable in a temperature range of 100 to 400° C. and the amount of the chloride of the metal M is from 0.01 to 0.18 as a concentration ratio to the titanium tetraisopropoxide (TTIP) (chloride of metal M (mol %)/TTIP (mol %)).