- 专利标题: Thin film transistor substrate and manufacturing method thereof
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申请号: US15471969申请日: 2017-03-28
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公开(公告)号: US10288966B2公开(公告)日: 2019-05-14
- 发明人: O Sung Seo , Tae Kyung Yim , Hyun-Ho Kang , Hyung June Kim
- 申请人: Samsung Display Co., Ltd.
- 申请人地址: KR Gyeonggi-Do
- 专利权人: SAMSUNG DISPLAY CO., LTD.
- 当前专利权人: SAMSUNG DISPLAY CO., LTD.
- 当前专利权人地址: KR Gyeonggi-Do
- 代理机构: Cantor Colburn LLP
- 优先权: KR10-2013-0109370 20130911
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; G02F1/1333 ; G02F1/1335 ; G02F1/1343 ; G02F1/1362 ; G02F1/1368
摘要:
A thin film transistor array panel includes a first substrate, a gate line disposed on the first substrate and includes a lower layer including titanium, a middle layer including a transparent conductive material, and an upper layer including copper, a pixel electrode disposed on the first substrate and includes a lower layer including titanium, and an upper layer including the transparent conductive material, a gate insulating layer disposed on the gate line and the pixel electrode, a semiconductor layer disposed on the gate insulating layer, a data line and a drain electrode disposed on the semiconductor layer, a passivation layer which covers the data line and the drain electrode, and a common electrode disposed on the passivation layer.
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