Invention Grant
- Patent Title: Thin film transistor substrate and manufacturing method thereof
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Application No.: US15471969Application Date: 2017-03-28
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Publication No.: US10288966B2Publication Date: 2019-05-14
- Inventor: O Sung Seo , Tae Kyung Yim , Hyun-Ho Kang , Hyung June Kim
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Cantor Colburn LLP
- Priority: KR10-2013-0109370 20130911
- Main IPC: H01L27/12
- IPC: H01L27/12 ; G02F1/1333 ; G02F1/1335 ; G02F1/1343 ; G02F1/1362 ; G02F1/1368

Abstract:
A thin film transistor array panel includes a first substrate, a gate line disposed on the first substrate and includes a lower layer including titanium, a middle layer including a transparent conductive material, and an upper layer including copper, a pixel electrode disposed on the first substrate and includes a lower layer including titanium, and an upper layer including the transparent conductive material, a gate insulating layer disposed on the gate line and the pixel electrode, a semiconductor layer disposed on the gate insulating layer, a data line and a drain electrode disposed on the semiconductor layer, a passivation layer which covers the data line and the drain electrode, and a common electrode disposed on the passivation layer.
Public/Granted literature
- US20170205651A1 THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-07-20
Information query
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