One illustrative method disclosed herein may include forming a contact etching structure in a layer of insulating material positioned above first and second lower conductive structures, wherein at least a portion of the contact etching structure is positioned laterally between the first and second lower conductive structures, forming a first conductive line and a first conductive contact adjacent a first side of the contact etching structure and forming a second conductive line and a second conductive contact adjacent a second side of the contact etching structure, wherein a spacing between the first and second conductive lines is approximately equal to a dimension of the contact etching structure.