Invention Grant
- Patent Title: Semiconductor device and method for forming the same
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Application No.: US15696167Application Date: 2017-09-05
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Publication No.: US10290710B2Publication Date: 2019-05-14
- Inventor: Kuo-Chih Lai , Ming-Chang Lu , Wei Chen , Hui-Lin Wang , Yi-Ting Liao , Chin-Fu Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/385 ; H01L29/24 ; H01L29/51 ; H01L29/66 ; H01L29/786

Abstract:
A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a first gradient layer, two source/drain structures, a second gradient layer, and a gate. The first gradient layer is disposed on the substrate. The two source/drain structures are separately disposed on the first gradient layer. The second gradient layer is disposed on the two source/drain structures and the first gradient layer, and a second portion of the second gradient layer directly contacts a first portion of the first gradient layer. The gate is disposed on the second gradient layer, between the two source/drain structures.
Public/Granted literature
- US20190074357A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2019-03-07
Information query
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