MIS capacitors are formed using a finned semiconductor structure. A highly doped region including the fins is formed within the structure and forms one plate of a MIS capacitor. A metal layer forms a second capacitor plate that is separated from the first plate by a high-k capacitor dielectric layer formed directly on the highly doped fins. Contacts are electrically connected to the capacitor plates. A highly doped implantation layer having a conductivity type opposite to that of the highly doped region provides electrical isolation within the structure.