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公开(公告)号：US10763386B2
公开(公告)日：2020-09-01
申请号：US16034589
申请日：2018-07-13
发明人： Keith E. Fogel , Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
IPC分类号： H01L31/105 , H01L31/078 , H01L31/0725 , H01L31/0352 , H01L31/0745 , H01L31/076 , H01L31/18 , H01L31/20
摘要： A photovoltaic device that includes an upper cell that absorbs a first range of wavelengths of light and a bottom cell that absorbs a second range of wavelengths of light. The bottom cell includes a heterojunction comprising a crystalline germanium containing (Ge) layer. At least one surface of the crystalline germanium (Ge) containing layer is in contact with a silicon (Si) containing layer having a larger band gap than the crystalline (Ge) containing layer.
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公开(公告)号：US10756220B2
公开(公告)日：2020-08-25
申请号：US16400390
申请日：2019-05-01
IPC分类号： H01L31/0236 , H01L31/047 , H01L31/18 , H01L31/075 , H01L31/046
摘要： A photovoltaic device includes a substrate having a plurality of hole shapes formed therein. The plurality of hole shapes each have a hole opening extending from a first surface and narrowing with depth into the substrate. The plurality of hole shapes form a hole pattern on the first surface, and the hole pattern includes flat areas separating the hole shapes on the first surface. A photovoltaic device stack is formed on the first surface and extends into the hole shapes. Methods are also provided.
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公开(公告)号：US10672929B2
公开(公告)日：2020-06-02
申请号：US15334807
申请日：2016-10-26
发明人： Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoar-Tabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
IPC分类号： H01L31/0725 , H01L31/078 , H01L31/18 , H01L31/20 , H01L31/0747 , C23C14/34 , H01L31/0216 , H01L31/0224 , H01L31/074
摘要： A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.
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公开(公告)号：US10340221B1
公开(公告)日：2019-07-02
申请号：US15905961
申请日：2018-02-27
IPC分类号： H01L21/00 , H01L23/525 , H01L29/78
摘要： A method and apparatus for forming a semiconductor structure is provided. The semiconductor structure comprises a stacked fin structure formed on a surface of a first insulator layer. The stacked fin structure comprises a first doped semiconductor fin portion and a second doped semiconductor fin portion. The anti-fuse structure further comprises a first highly doped diamond shaped epitaxial structure grown about the first semiconductor fin portion and a second diamond shaped highly doped epitaxial structure grown about the second semiconductor fin portion. The first highly doped epitaxial structure has a lower-most apex overlying and aligned with an upper-most apex of the second highly doped epitaxial structure. The lower-most apex is separated from the upper-most apex by a gap. A second insulating layer formed about the first highly-doped epitaxial structure and the second highly-doped epitaxial structure, wherein the second insulator layer fills the gap.
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公开(公告)号：US20190172827A1
公开(公告)日：2019-06-06
申请号：US16256143
申请日：2019-01-24
IPC分类号： H01L27/088 , H01L21/8234 , H01L21/02 , H01L29/161 , H01L29/10
摘要： A method of forming a semiconductor device that includes providing regions of epitaxial oxide material on a substrate of a first lattice dimension, wherein regions of the epitaxial oxide material separate regions of epitaxial semiconductor material having a second lattice dimension are different than the first lattice dimension to provide regions of strained semiconductor. The regions of the strained semiconductor material are patterned to provide regions of strained fin structures. The epitaxial oxide that is present in the gate cut space obstructs relaxation of the strained fin structures. A gate structure is formed on a channel region of the strained fin structures separating source and drain regions of the fin structures.
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公开(公告)号：US10290747B2
公开(公告)日：2019-05-14
申请号：US16011445
申请日：2018-06-18
IPC分类号： H01L29/94 , H01L29/66 , H01L21/8234 , H01L29/06 , H01L27/06
摘要： MIS capacitors are formed using a finned semiconductor structure. A highly doped region including the fins is formed within the structure and forms one plate of a MIS capacitor. A metal layer forms a second capacitor plate that is separated from the first plate by a high-k capacitor dielectric layer formed directly on the highly doped fins. Contacts are electrically connected to the capacitor plates. A highly doped implantation layer having a conductivity type opposite to that of the highly doped region provides electrical isolation within the structure.
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公开(公告)号：US10249792B2
公开(公告)日：2019-04-02
申请号：US15791739
申请日：2017-10-24
IPC分类号： H01L21/00 , H01L33/32 , H01L21/02 , H01L33/00 , H01L33/44 , H01L33/06 , H01L33/12 , H01L33/36
摘要： A method of producing a semiconductor device includes forming a stack including a semiconductor material having a Group III nitride semiconductor material formed on a growth substrate, a protective layer formed over the Group III nitride semiconductor material, and a handle layer and a stressor layer formed over the protective layer. The stack is spalled to separate the growth substrate from the stack.
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公开(公告)号：US10056510B2
公开(公告)日：2018-08-21
申请号：US14728658
申请日：2015-06-02
IPC分类号： H01L31/0236 , H01L31/18 , H01L31/046 , H01L31/075 , H01L31/047
CPC分类号： H01L31/02366 , H01L31/046 , H01L31/047 , H01L31/075 , H01L31/18 , Y02E10/50 , Y10T428/24479
摘要： A photovoltaic device includes a substrate having a plurality of hole shapes formed therein. The plurality of hole shapes each have a hole opening extending from a first surface and narrowing with depth into the substrate. The plurality of hole shapes form a hole pattern on the first surface, and the hole pattern includes flat areas separating the hole shapes on the first surface. A photovoltaic device stack is formed on the first surface and extends into the hole shapes. Methods are also provided.
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公开(公告)号：US10020418B2
公开(公告)日：2018-07-10
申请号：US14668397
申请日：2015-03-25
CPC分类号： H01L33/0079 , H01L33/44 , H01L33/56 , H01L33/58 , H01L33/64 , H01L2933/0025 , H01L2933/005 , H01L2933/0058 , H01L2933/0075
摘要： Techniques for integrating spalling into layer transfer processes involving optical device semiconductor materials are provided. In one aspect, a layer transfer method for an optical device semiconductor material includes forming the optical device semiconductor material on a first substrate; depositing a metal stressor layer on top of the optical device semiconductor material; attaching a first handle layer to the metal stressor layer; removing the optical device semiconductor material from the first substrate by pulling the first handle layer away from the first substrate; attaching a second handle layer to the optical device semiconductor material; removing the first handle layer from the stack; and forming a second substrate on the stressor layer. Vertical LED devices and techniques for formation thereof are also provided.
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公开(公告)号：US20180108790A1
公开(公告)日：2018-04-19
申请号：US15847117
申请日：2017-12-19
IPC分类号： H01L31/0236 , H01L31/0352 , H01L31/18 , H01L31/105 , H01L31/0224
CPC分类号： H01L31/02363 , H01L31/022425 , H01L31/022466 , H01L31/022483 , H01L31/02366 , H01L31/035281 , H01L31/105 , H01L31/1884 , Y02E10/50
摘要： A photovoltaic device includes a substrate layer having a plurality of three-dimensional structures formed therein providing a textured profile. A first electrode is formed over the substrate layer and extends over the three-dimensional structures including non-planar surfaces. The first electrode has a thickness configured to maintain the textured profile, and the first electrode includes a transparent conductive material having a dopant metal activated within the transparent conductive material. A continuous photovoltaic stack is conformally formed over the first electrode, and a second electrode is formed on the photovoltaic stack.
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