An isolated insulated gate bipolar transistor (IGBT) gate driver is provided which integrates circuits, in-module, to support the measurements of threshold voltage, and collector-emitter saturation voltage of IGBTs. The measured gate threshold and collector-emitter saturation voltage can be used as precursors for state of health predictions for IGBTs. During the measurements, IGBTs are biased under specific conditions chosen to quickly elicit collector-emitter saturation and gate threshold information. Integrated analog-to-digital converter (ADC) circuits are used to convert measured analog signals to a digital format. The digitalized signals are transferred to a micro controller unit (MCU) for further processing through serial peripheral interface (SPI) circuits.