Invention Grant
- Patent Title: Integrating silicon photonics and laser dies using flip-chip technology
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Application No.: US15633799Application Date: 2017-06-27
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Publication No.: US10295740B2Publication Date: 2019-05-21
- Inventor: Ido Bourstein , Sylvie Rockman
- Applicant: Mellanox Technologies, Ltd.
- Applicant Address: IL Yokneam
- Assignee: Mellanox Technologies, Ltd.
- Current Assignee: Mellanox Technologies, Ltd.
- Current Assignee Address: IL Yokneam
- Agency: Kligler & Associates
- Main IPC: G02B6/122
- IPC: G02B6/122 ; H01S5/022 ; H01S5/024 ; G02B6/42 ; H01S5/042 ; G02B6/12 ; H01S5/40

Abstract:
An optoelectronic device includes an optoelectronic die, a laser die, and electrical interconnects. The optoelectronic device has a surface. A trench having first and second walls and a floor is formed in the surface, and an electrically conductive layer extends from the floor, via the first wall, to the surface. The laser die includes first and second electrodes and a laser output aperture. The laser die is mounted in the trench and is configured to emit a laser beam. The first electrode is coupled to the electrically conductive layer and the laser output aperture is mechanically aligned with a waveguide that extends from the second wall. The interconnects are formed on the second electrode of the laser die and on selected locations on the surface of the optoelectronic die. The interconnects are coupled to a substrate, and are configured to conduct electrical signals between the optoelectronic die and the substrate.
Public/Granted literature
- US20180011248A1 Integrating Silicon Photonics and Laser Dies using Flip-Chip Technology Public/Granted day:2018-01-11
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