A memory device and associated control methods are provided. The memory device is electrically connected to M bit lines and N word lines. The memory device includes a memory array having memory cells and a controller. The memory cells are located at intersections of the M bit lines and the N word lines. A selected memory cell including a storage element and a selector switch is electrically connected to an m-th bit line and an n-th word line. The controller changes a cell cross voltage of the selected memory cell in the first duration, the second duration, and the post duration, respectively. The cell cross voltage in the first duration is greater than the cell cross voltage in the post duration, and the cell cross voltage in the post duration is greater than the cell cross voltage in the second duration.