Invention Grant
- Patent Title: Plasma generation apparatus, CVD apparatus, and plasma-treated particle generation apparatus
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Application No.: US14131345Application Date: 2012-04-23
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Publication No.: US10297423B2Publication Date: 2019-05-21
- Inventor: Yoichiro Tabata , Kensuke Watanabe
- Applicant: Yoichiro Tabata , Kensuke Watanabe
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MITSUBISHI—ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
- Current Assignee: TOSHIBA MITSUBISHI—ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-196323 20110908
- International Application: PCT/JP2012/060846 WO 20120423
- International Announcement: WO2013/035377 WO 20130314
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H05H1/24 ; C23C16/452 ; C23C16/455 ; C23C16/503

Abstract:
A plasma generation apparatus according to the present invention includes an electrode cell and a housing that encloses an electrode cell. The electrode cell includes a first electrode, a second electrode facing the first electrode with interposition of a discharge space therebetween, and dielectrics arranged on main surfaces of the electrodes. The plasma generation apparatus further includes a pipe passage configured to directly supply a source gas from the outside of the housing to the discharge space without being connected to a space within the housing where the electrode cell is not arranged.
Public/Granted literature
- US20140123897A1 PLASMA GENERATION APPARATUS, CVD APPARATUS, AND PLASMA-TREATED PARTICLE GENERATION APPARATUS Public/Granted day:2014-05-08
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