- 专利标题: Method of manufacturing redistribution circuit structure and method of manufacturing integrated fan-out package
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申请号: US15235109申请日: 2016-08-12
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公开(公告)号: US10297551B2公开(公告)日: 2019-05-21
- 发明人: Hui-Jung Tsai , Hung-Jui Kuo , Yun-Chen Hsieh
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: JCIPRNET
- 主分类号: H01L23/538
- IPC分类号: H01L23/538 ; H01L21/48 ; H01L21/56 ; H01L23/31 ; H01L25/10 ; H01L23/498 ; H01L23/00 ; H01L25/00
摘要:
A method of manufacturing a redistribution circuit structure and a method of manufacturing an INFO package at least include the following steps. An inter-dielectric layer is formed over a substrate. A seed layer is formed over the inter-dielectric layer. A plurality of conductive patterns are formed over the seed layer. The seed layer and the conductive patterns include a same material. While maintain a substantially uniform pitch width in the conductive pattern, the seed layer exposed by the conductive patterns is selectively removed through a dry etch process to form a plurality of seed layer patterns. The conductive patterns and the seed layer patterns form a plurality of redistribution conductive patterns.
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