- 专利标题: Semiconductor device and method of manufacturing a semiconductor device
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申请号: US15915992申请日: 2018-03-08
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公开(公告)号: US10297562B2公开(公告)日: 2019-05-21
- 发明人: Kaku Igarashi , Shinjiro Kato , Hisashi Hasegawa , Masaru Akino , Yukihiro Imura
- 申请人: ABLIC Inc.
- 申请人地址: JP Chiba
- 专利权人: ABLIC INC.
- 当前专利权人: ABLIC INC.
- 当前专利权人地址: JP Chiba
- 代理机构: Brinks Gilson & Lione
- 优先权: JP2017-048800 20170314
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/00 ; H01L21/02 ; H01L23/31
摘要:
Provided is a semiconductor device that is resistant to the corrosion of titanium nitride forming an anti-reflection film. The semiconductor device includes: a wiring layer which includes a wiring film made of aluminum or an aluminum alloy and formed on a substrate and a titanium nitride film formed on the wiring film; a protection layer which covers a top surface and a side surface of the wiring layer; and a pad portion which penetrates the protection layer and the titanium nitride film, and which exposes the wiring film, the protection layer including a first silicon nitride film, an oxide film, and a second silicon nitride film which are layered in the stated order from the side of the wiring layer.