公开(公告)号：US20200185343A1

公开(公告)日：2020-06-11

申请号：US16794443

申请日：2020-02-19

申请人： ABLIC Inc.

发明人： Shinjiro Kato ,  Masaru AKINO

IPC分类号： H01L23/00 ,  H01L23/31

摘要： A semiconductor device includes a substrate, a wiring formed on the substrate, an anti-reflection film of titanium nitride formed on the wiring, and a silicon oxide film formed on the anti-reflection film. A pad portion which exposes the wiring is formed at a place where a first opening portion and a second opening portion overlap with each other. A metal nitride region containing fewer dangling bonds is formed from a metal nitride film containing fewer dangling bonds than in the anti-reflection film in at least a part of one or both of an opposed surface of the anti-reflection film which faces the silicon oxide film above the anti-reflection film, and an exposed surface of the anti-reflection film which is exposed in the second opening portion.

公开(公告)号：US10978414B2

公开(公告)日：2021-04-13

申请号：US16794443

申请日：2020-02-19

申请人： ABLIC Inc.

发明人： Shinjiro Kato ,  Masaru Akino

IPC分类号： H01L23/31 ,  H01L23/48 ,  H01L21/02 ,  H01L29/06 ,  H01L23/528 ,  H01L23/00

摘要： A semiconductor device includes a substrate, a wiring formed on the substrate, an anti-reflection film of titanium nitride formed on the wiring, and a silicon oxide film formed on the anti-reflection film. A pad portion which exposes the wiring is formed at a place where a first opening portion and a second opening portion overlap with each other. A metal nitride region containing fewer dangling bonds is formed from a metal nitride film containing fewer dangling bonds than in the anti-reflection film in at least a part of one or both of an opposed surface of the anti-reflection film which faces the silicon oxide film above the anti-reflection film, and an exposed surface of the anti-reflection film which is exposed in the second opening portion.

公开(公告)号：US10249584B2

公开(公告)日：2019-04-02

申请号：US15915970

申请日：2018-03-08

申请人： ABLIC Inc.

发明人： Takeshi Morita ,  Shinjiro Kato ,  Masaru Akino ,  Yukihiro Imura

IPC分类号： H01L23/48 ,  H01L23/00

摘要： A semiconductor device includes: a substrate; a wiring formed above the substrate; a titanium nitride film formed on the wiring; an oxide film formed on the titanium nitride film; a silicon nitride film formed on the oxide film; and a pad portion exposing the wiring, and formed at a place where a first opening portion formed in the silicon nitride film and a second opening portion formed in the titanium nitride film overlap with each other in plan view, and being inside a third opening portion formed in the oxide film in plan view, wherein the silicon nitride film is formed on top of and in contact with the titanium nitride film inside the third opening portion in plan view.

公开(公告)号：US20240094756A1

公开(公告)日：2024-03-21

申请号：US18506621

申请日：2023-11-10

申请人： ABLIC INC.

发明人： Takeshi KOYAMA ,  Hisashi Hasegawa ,  Shinjiro Kato ,  Kohei Kawabata

IPC分类号： G05F3/24 ,  H01L27/088 ,  H01L29/49

CPC分类号： G05F3/24 ,  H01L27/0883 ,  H01L29/49 ,  H01L29/4908

摘要： Provided is a semiconductor device with a reference voltage circuit including an enhancement type transistor having P-type polycrystalline silicon as a first gate electrode, and a depletion type transistor having N-type polycrystalline silicon as a second gate electrode, in which the enhancement type transistor has an impermeable film that is locally provided to cover the first gate electrode via an interlayer insulating film disposed on the first gate electrode, and a nitride film that has an opening portion which is provided larger than the first gate electrode and smaller than the impermeable film, and is provided to cover a periphery of the impermeable film, and the depletion type transistor has a nitride film that is directly provided on an interlayer insulating film disposed on the second gate electrode and covers the depletion type transistor without a gap.

公开(公告)号：US10586776B2

公开(公告)日：2020-03-10

申请号：US15906477

申请日：2018-02-27

申请人： ABLIC Inc.

发明人： Yoichi Mimuro ,  Shinjiro Kato ,  Tetsuo Shioura

IPC分类号： H01L23/00 ,  H01L21/02 ,  H01L23/31 ,  H01L21/78 ,  H01L23/29 ,  H01L21/311

摘要： A semiconductor device includes a substrate; a laminate which is formed on one main surface side of the substrate, and includes an aluminum alloy wiring and an insulating film surrounding the aluminum alloy wiring; and a silicon nitride film covering the laminate, in which the silicon nitride film and the insulating film have an opening portion, through which the silicon nitride film and the insulating film, formed at a position overlapped with a bonding portion of the aluminum alloy wiring, and a deposition made of a residue caused by reverse sputtering, which contains silicon and nitrogen, adheres to a portion exposed from the opening portion of a surface of the aluminum alloy wiring, to form a film.

公开(公告)号：US11587869B2

公开(公告)日：2023-02-21

申请号：US17082971

申请日：2020-10-28

申请人： ABLIC Inc.

发明人： Hisashi Hasegawa ,  Takeshi Koyama ,  Shinjiro Kato ,  Kohei Kawabata

IPC分类号： H01L23/528 ,  H01L23/532 ,  H01L27/088

摘要： A semiconductor device includes a semiconductor substrate, a field-effect transistor arranged at least partially on the semiconductor substrate and used in an analog circuit, and having a P-type gate electrode, an interlayer insulating film arranged on the field-effect transistor, and a hydrogen shielding metal or metallic film arranged on the interlayer insulting film and covering the P-type gate electrode and configured to shield hydrogen.

公开(公告)号：US20190189575A1

公开(公告)日：2019-06-20

申请号：US16272678

申请日：2019-02-11

申请人： ABLIC Inc.

发明人： Takeshi MORITA ,  Shinjiro Kato ,  Masaru Akino ,  Yukihiro Imura

IPC分类号： H01L23/00

CPC分类号： H01L24/05 ,  H01L23/562 ,  H01L23/564 ,  H01L24/03 ,  H01L2224/02251 ,  H01L2224/02255 ,  H01L2224/0226 ,  H01L2224/03011 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/05008 ,  H01L2224/05124 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/3512

摘要： A semiconductor device (10) includes: a substrate (1); a wiring (6) formed above the substrate (1); a titanium nitride film (7) formed on the wiring (6); an oxide film (3) formed on the titanium nitride film (7); a silicon nitride film (4) formed on the oxide film (3); and a pad portion (8) exposing the wiring (6), and formed at a place where a first opening portion (91) formed in the silicon nitride film (4) and a second opening portion (92) formed in the titanium nitride film (7) overlap with each other in plan view, and being inside a third opening portion (93) formed in the oxide film (3) in plan view, wherein the silicon nitride film (4) is formed on top of and in contact with the titanium nitride film (7) inside the third opening portion (93) in plan view.

公开(公告)号：US10297562B2

公开(公告)日：2019-05-21

申请号：US15915992

申请日：2018-03-08

申请人： ABLIC Inc.

发明人： Kaku Igarashi ,  Shinjiro Kato ,  Hisashi Hasegawa ,  Masaru Akino ,  Yukihiro Imura

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L21/02 ,  H01L23/31

摘要： Provided is a semiconductor device that is resistant to the corrosion of titanium nitride forming an anti-reflection film. The semiconductor device includes: a wiring layer which includes a wiring film made of aluminum or an aluminum alloy and formed on a substrate and a titanium nitride film formed on the wiring film; a protection layer which covers a top surface and a side surface of the wiring layer; and a pad portion which penetrates the protection layer and the titanium nitride film, and which exposes the wiring film, the protection layer including a first silicon nitride film, an oxide film, and a second silicon nitride film which are layered in the stated order from the side of the wiring layer.

公开(公告)号：US10607954B2

公开(公告)日：2020-03-31

申请号：US15918405

申请日：2018-03-12

申请人： ABLIC Inc.

发明人： Shinjiro Kato ,  Masaru Akino

IPC分类号： H01L23/31 ,  H01L23/00

摘要： A semiconductor device includes a substrate, a wiring formed on the substrate, an anti-reflection film of titanium nitride formed on the wiring, and a silicon oxide film formed on the anti-reflection film. A pad portion which exposes the wiring is formed at a place where a first opening portion and a second opening portion overlap with each other. A metal nitride region containing fewer dangling bonds is formed from a metal nitride film containing fewer dangling bonds than in the anti-reflection film in at least a part of one or both of an opposed surface of the anti-reflection film which faces the silicon oxide film above the anti-reflection film, and an exposed surface of the anti-reflection film which is exposed in the second opening portion.

公开(公告)号：US10388618B2

公开(公告)日：2019-08-20

申请号：US16272678

申请日：2019-02-11

申请人： ABLIC Inc.

发明人： Takeshi Morita ,  Shinjiro Kato ,  Masaru Akino ,  Yukihiro Imura

IPC分类号： H01L23/48 ,  H01L23/00

摘要： A semiconductor device (10) includes: a substrate (1); a wiring (6) formed above the substrate (1); a titanium nitride film (7) formed on the wiring (6); an oxide film (3) formed on the titanium nitride film (7); a silicon nitride film (4) formed on the oxide film (3); and a pad portion (8) exposing the wiring (6), and formed at a place where a first opening portion (91) formed in the silicon nitride film (4) and a second opening portion (92) formed in the titanium nitride film (7) overlap with each other in plan view, and being inside a third opening portion (93) formed in the oxide film (3) in plan view, wherein the silicon nitride film (4) is formed on top of and in contact with the titanium nitride film (7) inside the third opening portion (93) in plan view.