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公开(公告)号：US20240333005A1
公开(公告)日：2024-10-03
申请号：US18604517
申请日：2024-03-14
申请人： ABLIC Inc.
发明人： Shinya FUKUCHI , Hiroshi SAITO , Keiichi MURAKAWA
IPC分类号： H02J7/00 , G01R31/396 , H01M10/46 , H01M50/204 , H01M50/51
CPC分类号： H02J7/0047 , G01R31/396 , H01M10/46 , H01M50/204 , H01M50/51 , H02J7/0013 , H02J7/00712
摘要： A cell number determination device, a charge and discharge control device, and a battery device with small circuit scale are provided. The cell number determination device includes: multiple differential amplifiers provided corresponding to multiple cells in a battery pack, of which the cell number is changeable, equipped with multiple cells connected in series; and multiple output circuits provided corresponding to the differential amplifiers. An input differential pair of the differential amplifiers includes a heteropolar gate NMOS transistor and an NMOS transistor.
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公开(公告)号：US20240255357A1
公开(公告)日：2024-08-01
申请号：US18497996
申请日：2023-10-30
申请人： ABLIC Inc.
IPC分类号： G01K7/01
CPC分类号： G01K7/01
摘要： A temperature sensor device is capable of measuring minute temperature changes while being manufactured at low cost without needing a high performance IC tester. A temperature sensor device includes a temperature sensor circuit 2 and a temperature sensor 1. The temperature sensor 1 includes a PN junction element 15 which is a temperature sensing element, a variable current source which supplies different forward currents of at least two values to the PN junction element 15 and a constant voltage source 16 which outputs a constant voltage having the same temperature properties as a forward voltage of the PN junction element 15.
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公开(公告)号：US12046992B2
公开(公告)日：2024-07-23
申请号：US17393731
申请日：2021-08-04
申请人： ABLIC Inc.
发明人： Yoshiomi Shiina
摘要： Provided is an overheat protection circuit with improved accuracy of overheat detection. The overheat protection circuit includes: an input terminal; an output terminal; a first transistor containing a first terminal, a second terminal, and a control terminal, the first transistor being switchable between ON and OFF; and a first NPN transistor containing a base to be connected to a node between the second terminal of the first transistor and the ground terminal, an emitter to be connected to the ground terminal, and a collector to be supplied with a constant current and connected to the output terminal, the first NPN transistor being switchable between ON and OFF in accordance with a voltage level of a reference voltage to be supplied to the base, the reference voltage having a temperature characteristic of having a temperature coefficient of zero or more.
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公开(公告)号：US20240210981A1
公开(公告)日：2024-06-27
申请号：US18393604
申请日：2023-12-21
申请人： ABLIC Inc.
发明人： Kosuke TAKADA
摘要： Provided is a constant voltage circuit with which a variation of an output voltage in response to a sudden change of a power supply voltage is small. The constant voltage circuit includes: an ED-type reference voltage circuit including at least two depletion mode transistors and an enhancement mode transistor which are connected in series; a depletion mode transistor connected in series between the power supply terminal and the ED-type reference voltage circuit; a first output terminal or a second output terminal; and a power supply variation suppression circuit which is connected between a connection point and the ground terminal and which suppresses a variation of the power supply voltage. The power supply variation suppression circuit includes a detection circuit which detects whether there is a variation of the power supply voltage, and a pass transistor which is connected in parallel to the detection circuit.
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公开(公告)号：US11962302B2
公开(公告)日：2024-04-16
申请号：US17689985
申请日：2022-03-09
申请人： ABLIC Inc.
发明人： Tomoki Hikichi
摘要： A semiconductor device includes a magnetic switch provided on a semiconductor substrate. The magnetic switch includes: a Hall element, first and second power supply terminals; a current source driving the Hall element; a switch circuit switching a differential output voltage supplied from two electrodes of the Hall element to a first or second state based on a control signal supplied from a control terminal; an amplifier amplifying a signal from the switch circuit; a reference voltage circuit generating a reference voltage based on a reference common mode voltage and a control signal; a comparator receiving an output signal of the amplifier and the reference voltage; and a latch circuit latching an output voltage of the comparator. The reference voltage of the reference voltage circuit is controlled by switching from a reference value to a voltage with a high or low adjustment value according to the output voltage of the comparator.
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公开(公告)号：US11948708B2
公开(公告)日：2024-04-02
申请号：US17545491
申请日：2021-12-08
申请人： ABLIC Inc.
发明人： Kaoru Sakaguchi
摘要： To provide a resistance device which has a small temperature dependence, in which a resistance value is adjustable in a wide range of from a high resistance value to a low resistance value, and which has a small circuit area, and to provide a current detection circuit including the resistance device. The resistance device is to be connected between two terminals, and a resistance value thereof is variable, the resistance device including: a reference resistor; a series variable resistor circuitry including at least one parallel variable resistor circuit which is connected in series to each other, and which each includes a resistor and a trimming element connected in parallel to the resistor; and a parallel variable resistor circuitry including at least one series variable resistor circuit which is connected in parallel to each other, and which each includes a resistor and a trimming element connected in series to the resistor.
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公开(公告)号：US20240094756A1
公开(公告)日：2024-03-21
申请号：US18506621
申请日：2023-11-10
申请人： ABLIC INC.
IPC分类号： G05F3/24 , H01L27/088 , H01L29/49
CPC分类号： G05F3/24 , H01L27/0883 , H01L29/49 , H01L29/4908
摘要： Provided is a semiconductor device with a reference voltage circuit including an enhancement type transistor having P-type polycrystalline silicon as a first gate electrode, and a depletion type transistor having N-type polycrystalline silicon as a second gate electrode, in which the enhancement type transistor has an impermeable film that is locally provided to cover the first gate electrode via an interlayer insulating film disposed on the first gate electrode, and a nitride film that has an opening portion which is provided larger than the first gate electrode and smaller than the impermeable film, and is provided to cover a periphery of the impermeable film, and the depletion type transistor has a nitride film that is directly provided on an interlayer insulating film disposed on the second gate electrode and covers the depletion type transistor without a gap.
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公开(公告)号：US11894849B2
公开(公告)日：2024-02-06
申请号：US17965788
申请日：2022-10-14
申请人： ABLIC Inc.
发明人： Junichi Kanno , Yasushi Imai
IPC分类号： H03K3/00 , H03K3/3565 , H03K3/013 , H03K3/2893
CPC分类号： H03K3/3565 , H03K3/013 , H03K3/2893
摘要： The present invention provides a Schmitt trigger circuit in which chattering does not occur in the output of the Schmitt trigger circuit even when it is connected to a communication bus without impedance matching and reflected noise is superimposed on the input signal. The Schmitt trigger circuit includes: a first signal detection circuit; a second signal detection circuit; a latch circuit; a selection signal generation circuit; a first input port; and a first output port. The first signal detection circuit is connected to the first input port, the latch circuit and the selection signal generation circuit. The second signal detection circuit is connected to the first input port, the latch circuit and the selection signal generation circuit. The latch circuit is connected to the selection signal generation circuit and the output port. The selection signal generation circuit includes a delay circuit.
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公开(公告)号：US20230317836A1
公开(公告)日：2023-10-05
申请号：US18185400
申请日：2023-03-17
申请人： ABLIC Inc.
发明人： Kazuhiro TSUMURA
IPC分类号： H01L29/735 , H01L29/10 , H01L29/08
CPC分类号： H01L29/735 , H01L29/1008 , H01L29/0821 , H01L29/0808
摘要： A bipolar transistor is capable of reducing variations in electrical characteristics. A bipolar transistor 100 includes: a collector region 150 which is a predetermined region in a P-type semiconductor substrate 110; a base region 140 which is formed within the collector region 150 and is an N-type well region; a polysilicon 130 formed on the base region 140 via an insulating film 131 and having an outer periphery, as viewed in a plan view, in a rectangular ring shape; and a P-type emitter region 120 surrounded by the polysilicon 130 and formed within the base region 140. The polysilicon 130 includes an extension portion 130a extending inside a contact region 141 of the base region 140 and electrically connected to the base region 140.
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公开(公告)号：US20230308096A1
公开(公告)日：2023-09-28
申请号：US18185395
申请日：2023-03-17
申请人： ABLIC Inc.
发明人： Tomoki HIKICHI , Takahiro ITO
IPC分类号： H03K17/22 , H03K19/003 , H03K19/0185
CPC分类号： H03K17/223 , H03K19/00384 , H03K19/018507
摘要： A voltage fluctuation detection circuit includes: a source voltage decrease detection circuit configured to detect a decrease in voltage of a first power supply which outputs a first voltage and to output the result of detection as a voltage decrease detection signal using a second voltage which is lower than the voltage of the first power supply; an erroneous detection prevention circuit configured to detect an increase in voltage of the first power supply and to output the result of detection as a voltage increase detection signal using the second voltage; and a transistor configured to mask outputting of the voltage decrease detection signal in a period in which the increase in voltage of the first power supply is being detected based on the voltage increase detection signal.
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