- 专利标题: Semiconductor device with a well region
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申请号: US15564389申请日: 2015-04-14
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公开(公告)号: US10297666B2公开(公告)日: 2019-05-21
- 发明人: Kohei Ebihara , Hiroshi Watanabe
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Chiyoda-ku
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Chiyoda-ku
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 国际申请: PCT/JP2015/061425 WO 20150414
- 国际公布: WO2016/166808 WO 20161020
- 主分类号: H01L29/16
- IPC分类号: H01L29/16 ; H01L29/06 ; H01L29/78 ; H01L29/872 ; H01L23/24 ; H01L29/40 ; H01L29/861 ; H01L23/31 ; H01L29/739
摘要:
Supposing x is defined as a position of an end of a depletion layer extending when a rated voltage V [V] is applied to a rear surface electrode, W1 is defined as a distance between the position x and an outer peripheral edge of a surface electrode in an outer peripheral direction, W2 is defined as a distance between the position x and an outer peripheral edge of a field insulating film in the outer peripheral direction, t [μm] is defined as a film thickness t [μm] of the field insulating film, a layout of a terminal part is defined so that an electrical field in the field insulating film at the position x expressed as W2V/t(W1+W2) is 3 MV/cm or smaller.
公开/授权文献
- US20180138272A1 SEMICONDUCTOR DEVICE 公开/授权日:2018-05-17
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