- 专利标题: Low thermal resistance, stress-controlled diode laser assemblies
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申请号: US15155152申请日: 2016-05-16
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公开(公告)号: US10297976B2公开(公告)日: 2019-05-21
- 发明人: Jürgen Müller , Rainer Bättig , Reinhard Brunner , Stefan Weiss
- 申请人: II-VI Laser Enterprise GmbH
- 申请人地址: CH Zurich
- 专利权人: II-VI Laser Enterprise GmbH
- 当前专利权人: II-VI Laser Enterprise GmbH
- 当前专利权人地址: CH Zurich
- 代理商 Wendy W. Koba
- 主分类号: H01S5/024
- IPC分类号: H01S5/024 ; H01S5/40 ; H01S5/30 ; H01S5/022 ; H01S5/026
摘要:
A diode laser bar assembly is formed to exhibit a relatively low thermal resistance, which also providing an increased range of conditions over which the internal stress conditions may be managed. In particular, the submount configuration of the prior art is replaced by a pair of platelets, disposed above and below the diode laser bar so as to form a “sandwich” structure. The bottom platelet is disposed between the heatsink (cooler) and the diode laser bar. Thus, the bottom platelet may be relatively thin, creating a low thermal resistance configuration. The combination of the top and bottom platelets provides the ability to create various configurations and designs that best accommodate stress conditions for a particular situation.
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