Invention Grant
- Patent Title: Nonvolatile memory device and operation method thereof
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Application No.: US15366137Application Date: 2016-12-01
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Publication No.: US10303372B2Publication Date: 2019-05-28
- Inventor: Youngjin Cho , Sungyong Seo , Sun-Young Lim , Uksong Kang , Chankyung Kim , Duckhyun Chang , JinHyeok Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2015-0170115 20151201; KR10-2015-0170119 20151201; KR10-2015-0170123 20151201; KR10-2015-0171660 20151203; KR10-2015-0171665 20151203
- Main IPC: G06F13/16
- IPC: G06F13/16 ; G06F3/06 ; G11C16/26 ; G11C16/10 ; G06F12/0868 ; G06F12/0893 ; G11C11/00

Abstract:
A nonvolatile memory device includes a nonvolatile memory, a volatile memory being a cache memory of the nonvolatile memory, and a first controller configured to control the nonvolatile memory. The nonvolatile memory device further includes a second controller configured to receive a device write command and an address, and transmit, to the volatile memory through a first bus, a first read command and the address and a first write command and the address sequentially, and transmit a second write command and the address to the first controller through a second bus, in response to the reception of the device write command and the address.
Public/Granted literature
- US20170153826A1 NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF Public/Granted day:2017-06-01
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