Invention Grant
- Patent Title: Memory programming methods and memory systems
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Application No.: US15690744Application Date: 2017-08-30
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Publication No.: US10304531B2Publication Date: 2019-05-28
- Inventor: Jonathan Strand , Adam Johnson , Xiaonan Chen , Durai Vishak Nirmal Ramaswamy
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C29/08 ; G11C29/50 ; G11C29/04

Abstract:
Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.
Public/Granted literature
- US20170365339A1 Memory Programming Methods and Memory Systems Public/Granted day:2017-12-21
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