A nonvolatile memory device may include a memory cell array and a control logic. The memory cell array has a plurality of memory cells connected to a plurality of word lines. The control logic controls, in a transition process from a verification step to a bit line setup step for a program operation of the plurality of memory cells, an application of a recovery voltage to a word line among the plurality of word lines. The recovery voltage applied to the word line is different from a recovery voltage applied to other word lines.