Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US15989771Application Date: 2018-05-25
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Publication No.: US10304768B2Publication Date: 2019-05-28
- Inventor: Kazuyuki Nakagawa , Shinji Baba , Takeumi Kato
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L25/00 ; H05K3/46 ; H01L21/56 ; H01L21/66 ; H01L23/31 ; H01L23/367 ; H01L23/66 ; H01L23/00 ; H01L23/50 ; H05K1/02

Abstract:
A semiconductor device includes a wiring substrate including wiring layers, a semiconductor chip including electrode pads and mounted on the wiring substrate, and a first capacitor including a first electrode and a second electrode, and mounted on the wiring substrate. The wiring layers include a first wiring layer including a first terminal pad electrically connected with the first electrode of the first capacitor and a second terminal pad electrically connected with the second electrode of the first capacitor; and a second wiring layer on an inner side by one layer from the first wiring layer of the wiring substrate and including a first conductor pattern having a larger area than each of the first terminal pad and the second terminal pad. The first conductor pattern includes a first opening in a region overlapping with each of the first terminal pad and the second terminal pad in the second wiring layer.
Public/Granted literature
- US20180277473A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-09-27
Information query
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