Invention Grant
- Patent Title: Polysilicon thin film transistor and manufacturing method thereof, array substrate, display panel
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Application No.: US15083646Application Date: 2016-03-29
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Publication No.: US10304963B2Publication Date: 2019-05-28
- Inventor: Xiaoyong Lu , Dong Li , Zheng Liu , Shuai Zhang , Liang Sun , Chunping Long
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Womble Bond Dickinson (US) LLP
- Priority: CN201510166484 20150409
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L21/265

Abstract:
The embodiments of the present disclosure provide a polysilicon thin film transistor and manufacturing method thereof, an array substrate, and a display panel. The method for manufacturing a polysilicon thin film transistor comprises: forming, on a substrate, a gate, a source and a drain, and an active layer. Forming the active layer comprises: forming a polysilicon layer on the substrate, which comprises a channel region and extension regions; performing ion injection process in the extension regions to form lightly-doped regions close to the channel region and a source region and a drain region; prior to or following the formation of the lightly-doped regions, employing halo ion injection process to form halo regions at the positions of the channel region which are close to the lightly-doped regions.
Public/Granted literature
- US20160300858A1 POLYSILICON THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, DISPLAY PANEL Public/Granted day:2016-10-13
Information query
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