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公开(公告)号：US09837542B2
公开(公告)日：2017-12-05
申请号：US15104504
申请日：2015-07-17
发明人： Zheng Liu , Chunping Long , Yu-Cheng Chan , Xiaoyong Lu , Xialong Li
IPC分类号： H01L29/78 , H01L29/66 , H01L27/12 , H01L29/786 , H01L21/02 , H01L21/265
CPC分类号： H01L29/78633 , H01L21/02532 , H01L21/02592 , H01L21/02667 , H01L21/26513 , H01L27/1222 , H01L29/66757 , H01L29/78618 , H01L29/78675 , H01L29/78696
摘要： A polycrystalline silicon thin-film transistor includes a substrate; an isolation layer formed on the substrate; and a polycrystalline silicon active layer formed on the substrate and the isolation layer, with two source-drain ion implantation regions being formed at both sides of the active layer, wherein the edges at both ends of the isolation layer are within the edges at both ends of the active layer. In the polycrystalline silicon thin-film transistor and the method for manufacturing the same, it is possible to increase the grain size of the active layer, improve the grain uniformity in a channel region thereof, effectively prevent deterioration of characteristics of the active layer caused by backlight irradiation, and improve the reliability of the device.
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公开(公告)号：US20170133512A1
公开(公告)日：2017-05-11
申请号：US15104504
申请日：2015-07-17
发明人： Zheng Liu , Chunping Long , Yu-Cheng Chan , Xiaoyong Lu , Xiaolong Li
IPC分类号： H01L29/786 , H01L27/12 , H01L21/265 , H01L29/66 , H01L21/02
CPC分类号： H01L29/78633 , H01L21/02532 , H01L21/02592 , H01L21/02667 , H01L21/26513 , H01L27/1222 , H01L29/66757 , H01L29/78618 , H01L29/78675 , H01L29/78696
摘要： The disclosure provides a polycrystalline silicon thin-film transistor and a method for manufacturing the same as well as a display device. The polycrystalline silicon thin-film transistor comprises: a substrate; an isolation layer formed on the substrate; and a polycrystalline silicon active layer formed on the substrate and the isolation layer, with two source-drain ion implantation regions being formed at both sides of the active layer, wherein the edges at both ends of the isolation layer are within the edges at both ends of the active layer. In the polycrystalline silicon thin-film transistor and the method for manufacturing the same provided by the disclosure, it is possible to increase the grain size of the active layer, improve the grain uniformity in a channel region thereof, effectively prevent deterioration of characteristics of the active layer caused by backlight irradiation, and improve the reliability of the device.
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公开(公告)号：US10084095B2
公开(公告)日：2018-09-25
申请号：US15322490
申请日：2016-03-01
发明人： Xiaolong Li , Zheng Liu , Xiaoyong Lu , Chunping Long , Huijuan Zhang
IPC分类号： H01L31/0312 , H01L29/786 , H01L29/04 , H01L29/16 , H01L29/66 , H01L21/04 , H01L21/02
CPC分类号： H01L29/78609 , H01L21/02527 , H01L21/02598 , H01L21/02609 , H01L21/0262 , H01L21/02664 , H01L21/043 , H01L29/045 , H01L29/1602 , H01L29/66045 , H01L29/66742 , H01L29/78621 , H01L29/78684 , H01L29/78696
摘要： The embodiments of present disclosure provide a thin film transistor, a method for manufacturing the same, and an array substrate. The thin film transistor comprises an active layer provided on a substrate, the active layer including a middle channel region, a first high resistance region and a second high resistance region provided respectively on external sides of the middle channel region, a source region provided on an external side of the first high resistance region and a drain region provided on an external side of the second high resistance region, wherein a base material of the active layer is diamond single crystal. According to the thin film transistor, the method for manufacturing the same, and the array substrate provided in the embodiments of present disclosure, by providing high resistance regions on external sides of the middle channel region of the active layer, the carrier mobility is reduced and the leakage current of the thin film transistor made of single crystalline diamond is effectively suppressed.
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4.发明授权公开(公告)号：US10446410B2
公开(公告)日：2019-10-15
申请号：US15321537
申请日：2016-03-07
发明人： Xiaoyong Lu , Chunping Long , Chien Hung Liu , Yucheng Chan , Xiaolong Li , Zheng Liu
IPC分类号： H01L21/321 , H01L21/306 , H01L21/768 , H01L21/3105 , H01L21/3213 , H01L21/02 , H01L21/48
摘要： Embodiments of the present invention provide a method of processing a surface of a polysilicon and a method of processing a surface of a substrate assembly. The method of processing a surface of a polysilicon includes forming a material film on the surface of the polysilicon; and processing, by using a chemico-mechanical polishing technology, the surface of the polysilicon on which the material film is formed. The material film is selected such that the polysilicon is preferentially removed in a polishing process.
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公开(公告)号：US09768308B2
公开(公告)日：2017-09-19
申请号：US14768349
申请日：2015-03-18
发明人： Xiaoyong Lu , Zheng Liu , Liang Sun , Xiaolong Li , Chunping Long
IPC分类号： H01L21/336 , H01L29/786 , H01L21/285 , H01L27/12 , H01L29/66 , H01L29/45
CPC分类号： H01L29/78618 , H01L21/28518 , H01L21/28568 , H01L27/1222 , H01L27/1274 , H01L29/458 , H01L29/665 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： A low temperature poly-silicon thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The method comprises: S1: sequentially forming an active layer (3), a gate insulation layer (4), a gate electrode (5) and an interlayer insulation layer (6) on a base substrate (1); S2: forming a first metal thin film layer (8); S3: performing a hydrogenation treatment on the active layer (3) and the gate insulation layer (6); S4: forming a second metal thin film layer (7), the second metal thin film layer (7) being used for forming a source electrode and a drain electrode.
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6.发明授权公开(公告)号：US10304963B2
公开(公告)日：2019-05-28
申请号：US15083646
申请日：2016-03-29
发明人： Xiaoyong Lu , Dong Li , Zheng Liu , Shuai Zhang , Liang Sun , Chunping Long
IPC分类号： H01L29/786 , H01L29/66 , H01L21/265
摘要： The embodiments of the present disclosure provide a polysilicon thin film transistor and manufacturing method thereof, an array substrate, and a display panel. The method for manufacturing a polysilicon thin film transistor comprises: forming, on a substrate, a gate, a source and a drain, and an active layer. Forming the active layer comprises: forming a polysilicon layer on the substrate, which comprises a channel region and extension regions; performing ion injection process in the extension regions to form lightly-doped regions close to the channel region and a source region and a drain region; prior to or following the formation of the lightly-doped regions, employing halo ion injection process to form halo regions at the positions of the channel region which are close to the lightly-doped regions.
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公开(公告)号：US10199506B2
公开(公告)日：2019-02-05
申请号：US15084802
申请日：2016-03-30
发明人： Xiaoyong Lu , Zheng Liu , Xiaolong Li , Dong Li , Huijuan Zhang , Liang Sun
IPC分类号： H01L29/786 , H01L29/66
摘要： The embodiments of the present invention disclose a low temperature poly-silicon (LTPS) transistor array substrate and a method of fabricating the same, and a display device. The LTPS transistor array substrate comprises a substrate; a poly-silicon semiconductor active region provided on the substrate; a gate insulated from the poly-silicon semiconductor active region; and a dielectric spacer region provided on a side wall of the gate, wherein a portion of the poly-silicon semiconductor active region corresponding to the dielectric spacer region comprises a buffer region, and the dielectric spacer region surrounds the side wall of the gate and covers the buffer region.
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公开(公告)号：US10096663B2
公开(公告)日：2018-10-09
申请号：US14785777
申请日：2015-03-12
发明人： Zheng Liu , Xiaoyong Lu , Xiaolong Li , Chien Hung Liu , Chunping Long
摘要： A manufacturing method of an array substrate, an array substrate and a display device are provided. The manufacturing method of the array substrate comprises: forming a first conductive thin film (100) on a base substrate (1); and patterning the first conductive thin film (100), to form a pattern of a cathode (11) on a first region (11) of the base substrate (1), and form a pattern of a gate electrode (4) on a second region (12) of the base substrate (1). Complexity and process time of a fabrication process of an array substrate can be reduced, a fabrication process of an organic electroluminescent panel can be simplified, and production cost can be reduced, by forming a cathode layer of a light-emitting diode and a gate electrode layer of a thin film transistor in different regions of the base substrate at the same time by one patterning process.
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公开(公告)号：US20170294345A1
公开(公告)日：2017-10-12
申请号：US15512372
申请日：2016-03-03
发明人： Xiaoyong Lu , Hongwei Tian , Yueping Zuo , Xiaowei Xu , Wenqing Xu , Chunping Long
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/02063 , H01L21/0228 , H01L21/02315 , H01L21/67 , H01L21/76814
摘要： Provided are a method and an apparatus for manufacturing a semiconductor device. The method comprises: forming a first wiring layer on a base substrate; forming an interlayer dielectric layer on the first wiring layer, with contact holes being provided in the interlayer dielectric layer; subjecting bottoms of the contact holes to a dry cleaning process; and forming a second wiring layer on the interlayer dielectric layer, wherein the second wiring layer is electrically connected to the first wiring layer via the contact holes.
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公开(公告)号：US10431669B2
公开(公告)日：2019-10-01
申请号：US15116980
申请日：2015-10-16
发明人： Xiaolong Li , Zheng Liu , Xiaoyong Lu , Dong Li , Chunping Long
IPC分类号： H01L29/66 , H01L21/20 , H01L21/265 , H01L21/28 , H01L27/12 , H01L29/06 , H01L29/786
摘要： A manufacturing method for a polysilicon thin film is provided. The manufacturing method for a polysilicon thin film includes forming a polysilicon layer, treating a surface of the polysilicon layer so that the surface of the polysilicon layer is electronegative, and supplying polar gas into a process chamber so that polar molecules of the polar gas are adsorbed on the surface of the polysilicon layer which is electronegative so as to form the polysilicon thin film, a surface of which has a hole density higher than an electron density.
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