Invention Grant
- Patent Title: Magnetoresistive element and magnetic memory device
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Application No.: US15699749Application Date: 2017-09-08
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Publication No.: US10305027B2Publication Date: 2019-05-28
- Inventor: Yushi Kato , Tadaomi Daibou , Yuuzo Kamiguchi , Naoharu Shimomura , Junichi Ito , Hiroaki Sukegawa , Mohamed Belmoubarik , Po-Han Cheng , Seiji Mitani , Tadakatsu Ohkubo , Kazuhiro Hono
- Applicant: Kabushiki Kaisha Toshiba , NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Applicant Address: JP Minato-ku JP Tsukuba-shi
- Assignee: Kabushiki Kaisha Toshiba,NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee: Kabushiki Kaisha Toshiba,NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee Address: JP Minato-ku JP Tsukuba-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2016-189475 20160928
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/02 ; H01L43/08 ; H01L43/10
Abstract:
According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.
Public/Granted literature
- US20180090671A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE Public/Granted day:2018-03-29
Information query
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