- 专利标题： Field-effect transistor (FET) having oxide insulating layer disposed on gate insulating film and between source and drain electrodes, and display element, display and system including said FET, and method of manufacturing said FET
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申请号： US15349211申请日： 2016-11-11
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公开(公告)号： US10312373B2公开(公告)日： 2019-06-04
- 发明人: Sadanori Arae , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Minehide Kusayanagi
- 申请人： Sadanori Arae , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Minehide Kusayanagi
- 申请人地址： JP Tokyo
- 专利权人： RICOH COMPANY, LTD.
- 当前专利权人： RICOH COMPANY, LTD.
- 当前专利权人地址： JP Tokyo
- 代理机构： Cooper & Dunham LLP
- 优先权： JP2015-224837 20151117; JP2016-201791 20161013
- 主分类号： G09G3/36
- IPC分类号： G09G3/36 ; G09G3/34 ; H01L29/786 ; H01L21/8234 ; H01L27/12 ; H01L21/4757 ; H01L21/4763 ; H01L21/02 ; H01L29/66 ; G02F1/1368 ; H01L27/32
摘要：
A field-effect transistor includes a gate electrode, a source electrode and a drain electrode to take out electric current according to an application of a voltage to the gate electrode, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, the semiconductor layer forming a channel between the source electrode and the drain electrode, a first insulating layer as gate insulating film disposed between the semiconductor layer and the gate electrode, and a second insulating layer covering at least a part of a surface of the semiconductor layer, the second insulating layer including an oxide including silicon and alkaline earth metal.
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