Invention Grant
- Patent Title: Thin-film capacitor
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Application No.: US15645339Application Date: 2017-07-10
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Publication No.: US10319526B2Publication Date: 2019-06-11
- Inventor: Hyun Ho Shin , Yun Sung Kang , Seung Mo Lim , Kyo Yeol Lee , Dong Joon Oh , Woong Do Jung , Ho Phil Jung , Hai Joon Lee
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Morgan Lewis & Bockius LLP
- Priority: KR10-2016-0157456 20161124
- Main IPC: H01G4/30
- IPC: H01G4/30 ; H01G4/33 ; H01G4/228 ; H01G4/236

Abstract:
A thin-film capacitor includes a body having a plurality of dielectric layers and first and second electrode layers alternately stacked on a substrate, first and second electrode pads disposed on one surface of the body, a plurality of vias having a multistage shape being disposed in the body, a first via of the plurality of vias connects the first electrode layer to the first electrode pad, and penetrates from the surface of the body to a first lowermost electrode layer adjacent the substrate, a second via of the plurality of vias connects the second electrode layer to the second electrode pad, and penetrates from the surface of the body to a second lowermost electrode layer adjacent the substrate and an upper surface of the first electrode layer is exposed in the first via, and an upper surface of the second electrode layer is exposed in the second via.
Public/Granted literature
- US20180144872A1 THIN-FILM CAPACITOR Public/Granted day:2018-05-24
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