Invention Grant
- Patent Title: Metal on both sides with power distributed through the silicon
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Application No.: US15747988Application Date: 2015-09-25
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Publication No.: US10325840B2Publication Date: 2019-06-18
- Inventor: Donald W. Nelson , Mark T. Bohr , Patrick Morrow
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2015/052445 WO 20150925
- International Announcement: WO2017/052641 WO 20170330
- Main IPC: H01L23/50
- IPC: H01L23/50 ; H01L23/498 ; H01L23/528 ; H01L49/02

Abstract:
An apparatus including a circuit structure including a device stratum; and a contact coupled to a supply line and routed through the device stratum and coupled to at least one device on a first side. A method including providing a supply from a package substrate to at least one transistor in a device stratum of a circuit structure; and distributing the supply to the at least one transistor using a supply line on an underside of the device stratum and contacting the at least one transistor on a device side by routing a contact from the supply line through the device stratum. A system including a package substrate, and a die including at least one supply line disposed on an underside of a device stratum and routed through the device stratum and coupled to at least one of a plurality of transistor devices on the device side.
Public/Granted literature
- US20180218973A1 METAL ON BOTH SIDES WITH POWER DISTRIBUTED THROUGH THE SILICON Public/Granted day:2018-08-02
Information query
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