Invention Grant
- Patent Title: Pseudo-shielded capacitor structures
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Application No.: US15717431Application Date: 2017-09-27
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Publication No.: US10332683B2Publication Date: 2019-06-25
- Inventor: Behzad Reyhani Masoleh , Ming Y. Tsai , Paul A. Martinez , Scott D. Morrison , Tracey L. Chavers
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Fletcher Yoder PC
- Main IPC: H01G4/248
- IPC: H01G4/248 ; H01G4/30 ; H01G4/002 ; H01G4/224 ; H05K1/02 ; H05K1/18 ; H05K1/11 ; H01G4/232 ; H05K3/34

Abstract:
Capacitor devices with electrodes that are geometrically arranged to reduce parasitic capacitances are described. The capacitors may be multilayer ceramic capacitor (MLCC) structures in which certain electrodes may have a clearance from a capacitor structure wall, such as top wall. In circuits and devices where that particular capacitor wall may be placed near a shielding structure, the clearance may reduce unintended parasitic capacitances between the shield structure and the electrodes. As a result, the shield structures may be placed closer to the electronic components, which may allow circuit boards and electronic devices with a lower profile.
Public/Granted literature
- US20190096581A1 PSEUDO-SHIELDED CAPACITOR STRUCTURES Public/Granted day:2019-03-28
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