Invention Grant
- Patent Title: Multi-layer structure and a method for manufacturing the same and a corresponding contact structure
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Application No.: US15382969Application Date: 2016-12-19
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Publication No.: US10332903B2Publication Date: 2019-06-25
- Inventor: Shih-Hung Chen
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L49/02 ; H01L27/11582 ; H01L27/1157 ; H01L27/11575

Abstract:
A method for manufacturing a multi-layer structure is provided. The method includes following steps. First, a stack of alternate conductive layers and insulating layers is formed on a substrate, and the stack includes a multi-layer area and a contact area adjacent to the multi-layer area. Next, a plurality of first openings are formed in the contact area. Then, a conductive connecting structure is formed on the stack and into the first openings. Thereafter, the stack is patterned. The conductive connecting structure continuously extends on the contact area and into the first openings to maintain an electrical connection among the conductive layers while the stack is patterned.
Public/Granted literature
- US20180174955A1 MULTI-LAYER STRUCTURE AND A METHOD FOR MANUFACTURING THE SAME AND A CORRESPONDING CONTACT STRUCTURE Public/Granted day:2018-06-21
Information query
IPC分类: